Liquid crystal display device

ABSTRACT

It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display deviceincluding a thin film transistor at least in a pixel portion.

2. Description of the Related Art

In recent years, technology that is used to form a thin film transistorusing a semiconductor thin film (with a thickness of from severalnanometers to several hundreds of nanometers, approximately) formed overa substrate that has an insulating surface has been attractingattention. Thin film transistors are applied to a wide range ofelectronic devices like ICs and electro-optical devices, and promptdevelopment of thin film transistors that are to be used as switchingelements in image display devices, in particular, is being pushed.

For switching elements in image display devices, a thin film transistorusing an amorphous semiconductor film, a thin film transistor using apolycrystalline semiconductor film, and the like are used. As a methodfor forming a polycrystalline semiconductor film, technology is known inwhich a pulsed excimer laser beam is processed into a linear shape by anoptical system and used to scan and irradiate an amorphous semiconductorfilm for crystallizing the amorphous semiconductor film.

Also, as switching elements in image display devices, a thin filmtransistor using a microcrystalline semiconductor film is used(Reference 1: Japanese Published Patent Application No. H4-242724 andReference 2: Japanese Published Patent Application No. 2005-49832).

A known conventional method for manufacturing the thin film transistoris that an amorphous silicon film is formed over a gate insulating film;a metal film is formed thereover; and the metal film is irradiated witha diode laser beam to modify the amorphous silicon film into amicrocrystalline silicon film (Reference 3: Toshiaki Arai et al., SID 07DIGEST, 2007, pp. 1370-1373). According to this method, the metal filmformed over the amorphous silicon film is provided to convert opticalenergy of the diode laser beam into thermal energy and should be removedin a later step to complete a thin film transistor. That is, the methodis that an amorphous semiconductor film is heated only by conductionheating from a metal film to form a microcrystalline semiconductor film.

SUMMARY OF THE INVENTION

A thin film transistor using a polycrystalline semiconductor film hasadvantages in that its mobility is two or more orders of magnitudegreater than that of a thin film transistor using an amorphoussemiconductor film and a pixel portion of a display device andperipheral driver circuits thereof can be formed over the samesubstrate. However, the process is more complex because ofcrystallization of a semiconductor film, compared to the case of usingan amorphous semiconductor film; accordingly, there are problems in thatthe yield is decreased and the cost is increased.

In view of the above-mentioned problems, it is an object of the presentinvention to propose a liquid crystal display device including a thinfilm transistor with high electric characteristics and high reliability.

As for a liquid crystal display device having an inverted staggered thinfilm transistor of a channel stop type in which a microcrystallinesemiconductor film is used as a channel formation region, the invertedstaggered thin film transistor is formed as follows: a gate insulatingfilm is formed over a gate electrode; a microcrystalline semiconductorfilm (also referred to as a semi-amorphous semiconductor film) whichfunctions as a channel formation region is formed over the gateinsulating film; a buffer layer is formed over the microcrystallinesemiconductor film; a channel protective layer is formed over the bufferlayer so as to overlap with the channel formation region of themicrocrystalline semiconductor film; a pair of source and drain regionsare formed over the channel protective layer and the buffer layer; and apair of source and drain electrodes are formed in contact with thesource and drain regions.

The channel protective layer (also referred to as simply a protectivelayer) is provided over the channel formation region of themicrocrystalline semiconductor film with the buffer layer interposedtherebetween. Thus, damage which is caused in the manufacturing processto the buffer layer over the channel formation region of themicrocrystalline semiconductor film (such as reduction in film thicknessdue to plasma or an etching agent in etching, or oxidation) can beprevented. Therefore, reliability of the thin film transistor can beimproved. Further, since the buffer layer over the channel formationregion of the microcrystalline semiconductor film is not etched, thebuffer layer is not needed to be formed thickly and film-formation timecan be shortened. Note that the channel protective layer functions as anetching stopper in etching for forming the source region and the drainregion and can also be referred to as a channel stopper layer.

For the buffer layer, an amorphous semiconductor film can be used.Preferably, an amorphous semiconductor film containing at least one ofnitrogen, hydrogen, and halogen is used. When the amorphoussemiconductor film contains any one of nitrogen, hydrogen, and halogen,oxidation of crystals included in the microcrystalline semiconductorfilm can be reduced. While the microcrystalline semiconductor film hasan energy gap of 1.1 eV to 1.5 eV, the buffer layer has an energy gap aslarge as 1.6 eV to 1.8 eV and low mobility. The typical mobility of thebuffer layer is a fifth to a tenth of that of the microcrystallinesemiconductor film. Thus, the channel formation region is formed with amicrocrystalline semiconductor film, and the buffer layer serves ahigh-resistance region. The concentration of each of carbon, nitrogen,and oxygen contained in the microcrystalline semiconductor film is setat less than or equal to 3×10¹⁹ atoms/cm³, preferably, less than orequal to 5×10¹⁸ atoms/cm³. The thickness of the microcrystallinesemiconductor film is preferably from 2 nm to 50 nm, more preferably,from 10 nm to 30 nm.

The buffer layer can be formed by a plasma CVD method, a sputteringmethod, or the like. After formation of an amorphous semiconductor film,the surface of the amorphous semiconductor film can be nitrided,hydrogenated, or halogenated through processing of the surface of theamorphous semiconductor film with nitrogen plasma, hydrogen plasma, orhalogen plasma.

By provision of the buffer layer over the surface of themicrocrystalline semiconductor film, oxidation of crystal grainscontained in the microcrystalline semiconductor film can be reduced.Accordingly, the degree of degradation of electric characteristics ofthe thin film transistor can be lowered.

A microcrystalline semiconductor film can be formed over a substratedirectly as a microcrystalline semiconductor film, which is a differentpoint from the case of a polycrystalline semiconductor film.Specifically, a microcrystalline semiconductor film can be formed usingsilicon hydride as a source gas by use of a microwave plasma CVDapparatus with a frequency of greater than or equal to 1 GHz. Amicrocrystalline semiconductor film formed by the above method alsoincludes a microcrystalline semiconductor film which has crystal grainswith a diameter of 0.5 nm to 20 nm in an amorphous semiconductor.Therefore, a crystallization process after formation of thesemiconductor film is not necessary, which is different from the case ofthe polycrystalline semiconductor film; thus, the number of steps inmanufacturing a thin film transistor can be reduced, the yield of theliquid crystal display device can be improved, and the cost can besuppressed. In addition, since plasma generated by using microwaves witha frequency of greater than or equal to 1 GHz has high electron density,silicon hydride which is a source gas can be easily dissociated.Accordingly, compared to the case of using a high-frequency plasma CVDmethod with a frequency of several tens of MHz to several hundreds ofMHz, by use of a microwave plasma CVD apparatus with a frequency ofgreater than or equal to 1 GHz, the microcrystalline semiconductor filmcan be easily formed, a film-formation rate can be increased, and massproductivity of the liquid crystal display device can be improved.

In addition, a thin film transistor (TFT) is manufactured using themicrocrystalline semiconductor film, and a liquid crystal display deviceis manufactured using the thin film transistor for a pixel portion, andfurther, for a driver circuit. The thin film transistor using amicrocrystalline semiconductor film has a mobility of 1 cm²/N·sec to 20cm²/V·sec, which is 2 to 20 times higher than that of the thin filmtransistor using an amorphous semiconductor film. Therefore, part of thedriver circuit or the entire driver circuit can be formed over the samesubstrate as that of the pixel portion, so that a system-on-panel can bemanufactured.

The gate insulating film, the microcrystalline semiconductor film, thebuffer layer, the channel protective layer, and the semiconductor filmto which an impurity element imparting one conductivity type is addedwhich forms the source and drain regions may be formed in one reactionchamber, or different reaction chambers according to a kind of a film.

Before a substrate is carried into a reaction chamber to perform filmformation, it is preferable to perform cleaning, flush (washing)treatment (hydrogen flush using hydrogen as a flush substance, silaneflush using silane as a flush substance, or the like), and coating bywhich the inner wall of each reaction chamber is coated with aprotective film (the coating is also referred to as pre-coatingtreatment). Pre-coating treatment is treatment in which plasma treatmentis performed by flowing of a deposition gas in a reaction chamber tocoat the inner wall of the reaction chamber with a thin protective filmwhich is a film to be formed, in advance. By the flush treatment and thepre-coating treatment, a film to be formed can be prevented from beingcontaminated by an impurity element such as oxygen, nitrogen, orfluorine in the reaction chamber.

According to one aspect of the present invention, a liquid crystaldisplay device includes a gate electrode; a gate insulating film overthe gate electrode; a microcrystalline semiconductor film including achannel formation region over the gate insulating film; a buffer layerover the microcrystalline semiconductor film; a channel protective layerwhich is provided over the buffer layer so as to overlap with thechannel formation region of the microcrystalline semiconductor film; asource region and a drain region over the channel protective layer andthe buffer layer; and a source electrode and a drain electrode over thesource region and the drain region.

According to another aspect of the present invention, a liquid crystaldisplay device includes a gate electrode; a gate insulating film overthe gate electrode; a microcrystalline semiconductor film including achannel formation region over the gate insulating film; a buffer layerover the microcrystalline semiconductor film; a channel protective layerwhich is provided over the buffer layer so as to overlap with thechannel formation region of the microcrystalline semiconductor film; asource region and a drain region over the channel protective layer andthe buffer layer; a source electrode and a drain electrode over thesource region and the drain region; and an insulating film which coverspart of the channel protective layer, the source electrode, and thedrain electrode.

In the above structures, a pixel electrode is provided to beelectrically connected to the source electrode or the drain electrode ofthe channel stop type thin film transistor, and a liquid crystal elementand the thin film transistor are electrically connected to each otherthrough the pixel electrode.

The liquid crystal display device includes a display element. As thedisplay element, a liquid crystal element (liquid crystal displayelement) can be used. Further, a display medium whose contrast ischanged by an electric effect, such as an electronic ink, can be used.

In addition, the liquid crystal display device includes a panel in whicha liquid crystal element is sealed, and a module in which an IC and thelike including a controller are mounted on the panel. The presentinvention further relates to one mode of an element substrate before theliquid crystal element is completed in a manufacturing process of theliquid crystal display device, and the element substrate is providedwith a means to supply current to the liquid crystal element in each ofa plurality of pixels. Specifically, the element substrate may be in astate provided with only a pixel electrode of the liquid crystalelement, a state after a conductive film to be a pixel electrode isformed and before the conductive film is etched to form the pixelelectrode, or other states.

Note that a liquid crystal display device in this specification means animage display device, a display device, or a light source (including alighting device). Further, the liquid crystal display device includesany of the following modules in its category: a module to which aconnector such as an FPC (flexible printed circuit), TAB (tape automatedbonding) tape, or a TCP (tape carrier package) is attached; a modulehaving TAB tape or a TCP which is provided with a printed wiring boardat the end thereof; and a module having an IC (integrated circuit)directly mounted on a substrate provided with a display element by a COG(chip on glass) method.

According to the present invention, a liquid crystal display deviceincluding a thin film transistor with high electric characteristics andhigh reliability can be manufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an explanatory view of a liquid crystal display device of thepresent invention.

FIGS. 2A to 2D show a method for manufacturing a liquid crystal displaydevice of the present invention.

FIGS. 3A to 3C show a method for manufacturing a liquid crystal displaydevice of the present invention.

FIGS. 4A to 4D show a method for manufacturing a liquid crystal displaydevice of the present invention.

FIG. 5 is an explanatory view of a liquid crystal display device of thepresent invention.

FIGS. 6A to 6D show a method for manufacturing a liquid crystal displaydevice of the present invention.

FIGS. 7A to 7C show electronic devices to which the present invention isapplied.

FIG. 8 is a block diagram showing a main structure of an electronicdevice to which the present invention is applied.

FIGS. 9A to 9C show a liquid crystal display device of the presentinvention.

FIGS. 10A and 10B are plane views showing a plasma CVD apparatus of thepresent invention.

FIGS. 11A and 11B show a liquid crystal display device of the presentinvention.

FIG. 12 shows a liquid crystal display device of the present invention.

FIG. 13 shows a liquid crystal display device of the present invention.

FIG. 14 shows a liquid crystal display device of the present invention.

FIG. 15 shows a liquid crystal display device of the present invention.

FIG. 16 shows a liquid crystal display device of the present invention.

FIG. 17 shows a liquid crystal display device of the present invention.

FIG. 18 shows a liquid crystal display device of the present invention.

FIG. 19 shows a liquid crystal display device of the present invention.

FIG. 20 shows a liquid crystal display device of the present invention.

FIG. 21 shows a liquid crystal display device of the present invention.

FIG. 22 shows a liquid crystal display device of the present invention.

FIG. 23 shows a liquid crystal display device of the present invention.

FIG. 24 shows a liquid crystal display device of the present invention.

FIG. 25 shows a liquid crystal display device of the present invention.

FIG. 26 is an explanatory view of a liquid crystal display device of thepresent invention.

FIG. 27 is an explanatory view of a liquid crystal display device of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiment modes of the present invention will be described in detailwith reference to the accompanying drawings. Note that the presentinvention is not limited to the following description, and it is easilyunderstood by those skilled in the art that modes and details thereofcan be modified in various ways without departing from the spirit andthe scope of the present invention. Therefore, the present inventionshould not be interpreted as being limited to the description of theembodiment modes to be given below. In the structure of the presentinvention to be described below, the same reference numerals arecommonly given to the same components or components having similarfunctions in different drawings, and repetitive description will beomitted.

Embodiment Mode 1

This embodiment mode will describe a thin film transistor which is usedfor a liquid crystal display device and a manufacturing process of thethin film transistor with reference to FIG. 1, FIGS. 2A to 2D, FIGS. 3Ato 3C, and FIGS. 4A to 4D. FIG. 1, FIGS. 2A to 2D, and FIGS. 3A to 3Care cross-sectional views showing a thin film transistor and amanufacturing process thereof, and FIGS. 4A to 4D are plane viewsshowing a region in a pixel where the thin film transistor and a pixelelectrode are connected to each other. FIG. 1, FIGS. 2A to 2D, and FIGS.3A to 3C are cross-sectional views showing the thin film transistor in across section taken along a line A-B in FIGS. 4A to 4D, and amanufacturing process thereof.

As for a thin film transistor including a microcrystalline semiconductorfilm, an n-type thin film transistor has higher mobility than a p-typethin film transistor; thus, an n-type thin film transistor is moresuitable for a driver circuit. However, in the present invention, eitheran n-type or p-type thin film transistor can be used. With any polarityof a thin film transistor, it is preferable that all the thin filmtransistors formed over one substrate have the same polarity so that thenumber of manufacturing steps is reduced. Here, an n-channel thin filmtransistor will be described.

FIG. 1 shows a bottom gate thin film transistor 74 of a channel stoptype (also referred to as a channel protective type) of this embodimentmode.

In FIG. 1, the channel stop type thin film transistor 74 is providedover a substrate 50. The channel stop type thin film transistor 74includes a gate electrode 51, gate insulating films 52 a and 52 b, amicrocrystalline semiconductor film 61, a buffer layer 62, a channelprotective layer 80, source and drain regions 72, and source and drainelectrodes 71 a, 71 b, and 71 c. A pixel electrode 77 is provided so asto be in contact with the source or drain electrode 71 c. An insulatingfilm 76 is provided so as to cover the thin film transistor 74 and partof the pixel electrode 77. Note that FIG. 1 corresponds to FIG. 4D.

The channel protective layer 80 is provided over a channel formationregion of the microcrystalline semiconductor film 61 with the bufferlayer 62 interposed therebetween. Thus, damage which is caused in themanufacturing process to the buffer layer 62 over the channel formationregion of the microcrystalline semiconductor film 61 (such as reductionin film thickness due to plasma or an etching agent in etching, oroxidation) can be prevented. Therefore, reliability of the thin filmtransistor 74 can be improved. Further, the buffer layer 62 over thechannel formation region of the microcrystalline semiconductor film 61is not etched, so that the buffer layer 62 is not needed to be formedthickly and film-formation time can be shortened.

End portions of the microcrystalline semiconductor film 61 arepositioned more inwardly than those of the gate electrode 51 with whichthe microcrystalline semiconductor film 61 overlaps with the gateinsulating films 52 a and 52 b interposed therebetween, so that themicrocrystalline semiconductor film 61 is provided so as not to extendbeyond the gate electrode 51. Thus, the microcrystalline semiconductorfilm 61 can be formed in a flat region over the gate electrode 51 andthe gate insulating films 52 a and 52 b, and can be a film which coversthe underlying layers adequately and has uniform characteristics(crystalline structure) throughout the film.

Hereinafter, a manufacturing method will be described in detail. Thegate electrode 51 is formed over the substrate 50 (FIG. 2A and FIG. 4A).FIG. 2A is a cross-sectional view showing a cross section taken along aline A-B in FIG. 4A. As the substrate 50, a plastic substrate havingheat resistance that can withstand a processing temperature of themanufacturing process or the like as well as a non-alkaline glasssubstrate manufactured by a fusion method or a float method such as asubstrate of a barium borosilicate glass, an aluminoborosilicate glass,or an aluminosilicate glass, or a ceramic substrate can be used.Alternatively, a metal substrate such as a stainless steel alloysubstrate, provided with an insulating film over the surface, may alsobe used. As the substrate 50, a substrate having a size of 320 mm×400mm, 370 mm×470 mm, 550 mm×650 mm, 600 mm×720 mm, 680 mm×880 mm, 730mm×920 mm, 1000 mm×1200 mm, 1100 mm×1250 mm, 1150 mm×1300 mm, 1500mm×1800 mm, 1900 mm×2200 mm, 2160 mm×2460 mm, 2400 mm×2800 mm, 2850mm×3050 mm, or the like can be used.

The gate electrode 51 is formed of a metal material such as titanium,molybdenum, chromium, tantalum, tungsten, or aluminum, or an alloymaterial thereof. The gate electrode 51 can be formed as follows: aconductive film is formed over the substrate 50 by a sputtering methodor a vacuum evaporation method, a mask is formed by a photolithographytechnique or an ink-jet method over the conductive film, and theconductive film is etched using the mask. Alternatively, the gateelectrode 51 can be formed by discharging a conductive nanopaste ofsilver, gold, copper, or the like by an ink-jet method and baking it.Note that a nitride film formed of the above metal material may beprovided between the substrate 50 and the gate electrode 51 to improveadherence of the gate electrode 51 to the substrate 50 and to prevent,as a barrier metal, diffusion of impurities to a base film and thesubstrate. The gate electrode 51 may have a layered structure, and astructure can be used in which, from the substrate 50 side, an aluminumfilm and a molybdenum film are stacked, a copper film and a molybdenumfilm are stacked, a copper film and a titanium nitride film are stacked,a copper film and a tantalum nitride film are stacked, or the like. Inthe above layered structure, a molybdenum film or a nitride film such asa titanium nitride film or a tantalum nitride film which is formed inthe upper layer has an effect as a barrier metal.

Since semiconductor films and wirings are formed over the gate electrode51, the gate electrode 51 is preferably processed to have tapered endportions so that the semiconductor films and the wirings thereover arenot disconnected. Further, although not illustrated, wirings connectedto the gate electrode can also be formed at the same time when the gateelectrode is formed.

Next, the gate insulating films 52 a and 52 b, a microcrystallinesemiconductor film 53, and a buffer layer 54 are formed in sequence overthe gate electrode 51 (FIG. 2B).

The microcrystalline semiconductor film 53 may be formed over thesurface of the gate insulating film 52 b which is being (or which hasbeen) affected by hydrogen plasma. By formation of a microcrystallinesemiconductor film over a gate insulating film which has been affectedby hydrogen plasma, crystal growth of microcrystal can be accelerated.In addition, lattice distortion at the interface between the gateinsulating film and the microcrystalline semiconductor film can bedecreased, and interface characteristics of the gate insulating film andthe microcrystalline semiconductor film can be improved. Accordingly,electric characteristics and reliability of the microcrystallinesemiconductor film obtained can be improved.

Note that the gate insulating films 52 a and 52 b, the microcrystallinesemiconductor film 53, and the buffer layer 54 may be formedsuccessively without being exposed to the atmosphere. When the gateinsulating films 52 a and 52 b, the microcrystalline semiconductor film53, and the buffer layer 54 are formed successively without beingexposed to the atmosphere, an interface between the films can be formedwithout being contaminated with atmospheric components or impurityelements contained in the atmosphere. Thus, variation in characteristicsof the thin film transistors can be reduced.

The gate insulating films 52 a and 52 b can each be formed using asilicon oxide film, a silicon nitride film, a silicon oxynitride film,or a silicon nitride oxide film by a CVD method, a sputtering method, orthe like. In addition, the gate insulating films 52 a and 52 b can beformed by stacking a silicon nitride film or a silicon nitride oxidefilm, and a silicon oxide film or a silicon oxynitride film in sequence.Further, the gate insulating film can be formed with a three-layerstructure in which a silicon nitride film or a silicon nitride oxidefilm, a silicon oxide film or a silicon oxynitride film, and a siliconnitride film or a silicon nitride oxide film are stacked in sequencefrom the substrate side instead of a two-layer structure. In addition,the gate insulating film may be formed with a single layer of a siliconoxide film, a silicon nitride film, a silicon oxynitride film, or asilicon nitride oxide film. Furthermore, it is preferable to form thegate insulating film by use of a microwave plasma CVD apparatus with afrequency of greater than or equal to 1 GHz. A silicon oxynitride filmor a silicon nitride oxide film formed by use of a microwave plasma CVDapparatus has high resistance to voltage, so that reliability of thethin film transistor formed later can be improved.

As an example of the three-layer structure of the gate insulating film,over the gate electrode, a silicon nitride film or a silicon nitrideoxide film may be formed as a first layer, a silicon oxynitride film maybe formed as a second layer, and a silicon nitride film may be formed asa third layer, and the microcrystalline semiconductor film may be formedover the silicon nitride film that is a top layer. In this case, thesilicon nitride film or the silicon nitride oxide film in the firstlayer is preferably thicker than 50 nm and has an effect as a barrierwhich blocks impurities such as sodium, an effect of preventing ahillock of the gate electrode, an effect of preventing oxidation of thegate electrode, and the like. The silicon nitride film in the thirdlayer has an effect of improving adherence of the microcrystallinesemiconductor film and an effect of preventing oxidation in LP treatmentin which the microcrystalline semiconductor film is irradiated with alaser beam.

When a nitride film such as a silicon nitride film which is very thin isformed over the surface of the gate insulating film in this manner,adherence of the microcrystalline semiconductor film can be improved.The nitride film may be formed by a plasma CVD method, or by nitridationtreatment that is treatment with plasma which is generated by microwavesand has high density and low temperature. In addition, the siliconnitride film or the silicon nitride oxide film may also be formed when areaction chamber is subjected to silane flush treatment.

Note that a silicon oxynitride film means a film that contains moreoxygen than nitrogen and includes oxygen, nitrogen, silicon, andhydrogen at concentrations ranging from 55 at. % to 65 at. %, 1 at. % to20 at. %, 25 at. % to 35 at. %, and 0.1 at. % to 10 at. %, respectively.Further, a silicon nitride oxide film means a film that contains morenitrogen than oxygen and includes oxygen, nitrogen, silicon, andhydrogen at concentrations ranging from 15 at. % to 30 at. %, 20 at. %to 35 at. %, 25 at. % to 35 at. %, and 15 at. % to 25 at. %,respectively.

The microcrystalline semiconductor film 53 is a film which contains asemiconductor having an intermediate structure between amorphous andcrystalline structures (including a single crystal and a polycrystal).This semiconductor is a semiconductor which has a third state that isstable in terms of free energy, and is a crystalline semiconductor whichhas short-range order and lattice distortion, and column-like orneedle-like crystals with a grain size, seen from the film surface, of0.5 nm to 20 nm grown in the direction of a normal line with respect tothe surface of the substrate. In addition, a microcrystallinesemiconductor and an amorphous semiconductor are mixed. Microcrystallinesilicon, which is a typical example of a microcrystalline semiconductor,has a Raman spectrum which is shifted to a lower wave number side than521 cm⁻¹ that is a feature of single crystalline silicon. That is, thepeak of a Raman spectrum of microcrystalline silicon is within the rangefrom 480 cm⁻¹ (that is a feature of amorphous silicon) to 521 cm⁻¹ (thatis a feature of single crystalline silicon). In addition,microcrystalline silicon is made to contain hydrogen or halogen of atleast greater than or equal to 1 at. % for termination of danglingbonds. Moreover, microcrystalline silicon is made to contain a rare gaselement such as helium, argon, krypton, or neon to further enhance itslattice distortion, whereby stability is increased and a favorablemicrocrystalline semiconductor film can be obtained. Such amicrocrystalline semiconductor film is disclosed in, for example, U.S.Pat. No. 4,409,134.

The microcrystalline semiconductor film can be formed by ahigh-frequency plasma CVD method with a frequency of several tens of MHzto several hundreds of MHz or by use of a microwave plasma CVD apparatuswith a frequency of greater than or equal to 1 GHz. The microcrystallinesemiconductor film can be typically formed by a dilution of siliconhydride such as SiH₄, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, or SiF₄ withhydrogen. In addition, by a dilution with one or plural kinds of raregas elements selected from helium, argon, krypton, and neon in additionto silicon hydride and hydrogen, the microcrystalline semiconductor filmcan be formed. In that case, the flow rate ratio of hydrogen to siliconhydride is set to be 5:1 to 200:1, preferably, 50:1 to 150:1, morepreferably, 100:1.

The microcrystalline semiconductor film has low n-type conductivity whenan impurity element for controlling valence electrons is not addedthereto intentionally. Therefore, an impurity element imparting p-typeconductivity may be added to the microcrystalline semiconductor filmwhich functions as a channel formation region of a thin film transistorat the same time as or after formation of the microcrystallinesemiconductor film, so that the threshold voltage can be controlled. Atypical example of the impurity element imparting p-type conductivity isboron, and an impurity gas such as B₂H₆ or BF₃ may be added to siliconhydride at 1 ppm to 1000 ppm, preferably 1 ppm to 100 ppm. Theconcentration of boron is preferably set at 1×10¹⁴ atoms/cm³ to 6×10¹⁶atoms/cm³.

In addition, the oxygen concentration of the microcrystallinesemiconductor film is preferably set at less than or equal to 5×10¹⁹atoms/cm³, more preferably, less than or equal to 1×10¹⁹ atoms/cm³ andeach of the nitrogen concentration and the carbon concentration ispreferably set at less than or equal to 1×10¹⁸ atoms/cm³. By decreasesin concentrations of oxygen, nitrogen, and carbon to be mixed into themicrocrystalline semiconductor film, the microcrystalline semiconductorfilm can be prevented from being changed into an n-type.

The microcrystalline semiconductor film 53 is formed with a thickness ofgreater than 0 nm and less than or equal to 50 nm, preferably, greaterthan 0 nm and less than or equal to 20 nm.

The microcrystalline semiconductor film 53 functions as a channelformation region of a thin film transistor to be formed later. When thethickness of the microcrystalline semiconductor film 53 is within therange described above, a thin film transistor to be formed later is tobe a fully depleted type. In addition, because the microcrystallinesemiconductor film contains microcrystals, it has a lower resistancethan an amorphous semiconductor film. Therefore, a thin film transistorusing the microcrystalline semiconductor film has current-voltagecharacteristics represented by a curve with a steep slope in a risingportion, has an excellent response as a switching element, and can beoperated at high speed. With the use of the microcrystallinesemiconductor film for a channel formation region of a thin filmtransistor, fluctuation of a threshold voltage of a thin film transistorcan be suppressed. Therefore, a liquid crystal display device with lessvariation of electric characteristics can be manufactured.

The microcrystalline semiconductor film has higher mobility than anamorphous semiconductor film. Thus, with the use of a thin filmtransistor, a channel formation region of which is formed of themicrocrystalline semiconductor film, for switching of a display element,the area of the channel formation region, that is, the area of the thinfilm transistor can be decreased. Accordingly, the area occupied by thethin film transistor in a single pixel is decreased, and an apertureratio of the pixel can be increased. As a result of this, a liquidcrystal display device with high resolution can be manufactured.

In addition, the microcrystalline semiconductor film has needle-likecrystals which have grown longitudinally from the lower side. Themicrocrystalline semiconductor film has a mixed structure of amorphousand crystalline structures, and it is likely that a crack is generatedand a gap is formed between the crystalline region and the amorphousregion due to local stress. A new radical may be interposed into thisgap and cause crystal growth. Because the upper crystal face is larger,a crystal is likely to grow upward into a needle shape. Even if themicrocrystalline semiconductor film grows longitudinally as describedabove, the growth rate is a tenth to a hundredth of the film-formationrate of an amorphous semiconductor film.

The buffer layer 54 can be formed by a plasma CVD method using a silicongas (a silicon hydride gas or a silicon halide gas) such as SiH₄, Si₂H₆,SiH₂Cl₂, SiHCl₃, SiCl₄, or SiF₄. Alternatively, by a dilution of silanementioned above with one or plural kinds of rare gas elements selectedfrom helium, argon, krypton, and neon, an amorphous semiconductor filmcan be formed. With the use of hydrogen at a flow rate which is 1 to 20times, preferably, 1 to 10 times, more preferably, 1 to 5 times higherthan that of silicon hydride, a hydrogen-containing amorphoussemiconductor film can be formed. With the use of silicon hydridementioned above and nitrogen or ammonia, a nitrogen-containing amorphoussemiconductor film can be formed. With the use of silicon hydridementioned above and a gas containing fluorine, chlorine, bromine, oriodine (F₂, Cl₂, Br₂, I₂, HF, HCl, HBr, HI, or the like), an amorphoussemiconductor film containing fluorine, chlorine, bromine, or iodine canbe formed.

Alternatively, as the buffer layer 54, an amorphous semiconductor filmcan be formed by sputtering with hydrogen or a rare gas using anamorphous semiconductor as a target. In this case, by inclusion ofammonia, nitrogen, or N₂O in an atmosphere, a nitrogen-containingamorphous semiconductor film can be formed. Alternatively, by inclusionof a gas containing fluorine, chlorine, bromine, or iodine (F₂, Cl₂,Br₂, I₂, HF, HCl, HBr, HI, or the like) in an atmosphere, an amorphoussemiconductor film containing fluorine, chlorine, bromine, or iodine canbe formed.

Still alternatively, the buffer layer 54 may be formed by formation ofan amorphous semiconductor film over the surface of the microcrystallinesemiconductor film 53 by a plasma CVD method or a sputtering method andthen by hydrogenation, nitridation, or halogenation of the surface ofthe amorphous semiconductor film through processing of the surface ofthe amorphous semiconductor film with hydrogen plasma, nitrogen plasma,halogen plasma, or plasma of a rare gas (helium, argon, krypton, orneon).

The buffer layer 54 is preferably formed using an amorphoussemiconductor film. Therefore, when the buffer layer 54 is formed by ahigh-frequency plasma CVD method with a frequency of several tens of MHzto several hundreds of MHz or a microwave plasma CVD method, formationconditions are preferably controlled so that an amorphous semiconductorfilm can be obtained.

The buffer layer 54 is preferably formed with a thickness of 10 nm to 50nm, inclusive. The total concentration of nitrogen, carbon, and oxygencontained in the buffer layer is preferably set at 1×10²⁰ atoms/cm³ to15×10²⁰ atoms/cm³. With this concentration, also the buffer layer 54having a thickness of 10 nm to 50 nm, inclusive can function as ahigh-resistance region.

Alternatively, the buffer layer 54 may be formed with a thickness of 150nm to 200 nm, inclusive, and the concentration of each of carbon,nitrogen, and oxygen contained in the buffer layer 54 may be set at lessthan or equal to 3×10¹⁹ atoms/cm³, preferably, less than or equal to5×10¹⁸ atoms/cm³.

By formation of an amorphous semiconductor film or an amorphoussemiconductor film containing hydrogen, nitrogen, or halogen over thesurface of the microcrystalline semiconductor film 53 as a buffer layer,the surfaces of crystal grains contained in the microcrystallinesemiconductor film 53 can be prevented from being naturally oxidized.That is, by formation of the buffer layer over the surface of themicrocrystalline semiconductor film 53, the microcrystal grains can beprevented from being oxidized. Since the buffer layer includes hydrogenand/or fluorine, oxygen can be prevented from entering themicrocrystalline semiconductor film.

The buffer layer 54 is formed using an amorphous semiconductor film oran amorphous semiconductor film containing hydrogen, nitrogen, orhalogen, so that the buffer layer 54 has higher resistance than themicrocrystalline semiconductor film which functions as a channelformation region. Therefore, in a thin film transistor to be formedlater, the buffer layer formed between source and drain regions and themicrocrystalline semiconductor film functions as a high-resistanceregion. Accordingly, the off current of the thin film transistor can bereduced. When the thin film transistor is used as a switching element ofa liquid crystal display device, the contrast of the liquid crystaldisplay device can be improved.

Next, the channel protective layer 80 is formed over the buffer layer 54so as to overlap with the channel formation region of themicrocrystalline semiconductor film 53 (FIG. 2C). The channel protectivelayer 80 may also be formed successively after the gate insulating films52 a and 52 b, the microcrystalline semiconductor film 53, and thebuffer layer 54 are formed, without being exposed to the atmosphere.When the thin films that are stacked are formed successively withoutexposing the substrate to the atmosphere, the productivity can beimproved.

The channel protective layer 80 can be formed using an inorganicmaterial (such as silicon oxide, silicon nitride, silicon oxynitride, orsilicon nitride oxide). A photosensitive or non-photosensitive organicmaterial (organic resin material, e.g., polyimide, acrylic, polyamide,polyimideamide, resist, or benzocyclobutene), a film made of pluralkinds of these materials, or a stacked film of them may also be used.Alternatively, siloxane may be used. As a manufacturing method of thechannel protective layer 80, a vapor deposition method such as a plasmaCVD method or a thermal CVD method, or a sputtering method can be used.A coating method such as a spin coating method or a droplet dischargingmethod which is a wet method, a printing method (such as screen printingor offset printing by which a pattern is formed), or the like can alsobe used. The channel protective layer 80 may be formed and thenpatterned by etching, or may be formed as selected by a dropletdischarging method.

Next, the microcrystalline semiconductor film 53 and the buffer layer 54are patterned by etching, and a stack of the microcrystallinesemiconductor film 61 and the buffer layer 62 is formed (FIG. 2D). Themicrocrystalline semiconductor film 61 and the buffer layer 62 can beformed by forming a mask by a photolithography technique or a dropletdischarging method and etching the microcrystalline semiconductor film53 and the buffer layer 54 using the mask FIG. 2D is a cross-sectionalview of a cross section taken along a line A-B in FIG. 4B.

The end portions of the microcrystalline semiconductor film 61 and thebuffer layer 62 can be etched to have a tapered shape. The taper angleof the end portions is 30° to 90°, preferably 45° to 80°. Thus,disconnection of a wiring due to a step shape can be prevented.

Next, a semiconductor film 63 to which an impurity element imparting oneconductivity type is added (hereinafter, the semiconductor film 63) andconductive films 65 a to 65 c are formed over the gate insulating film52 b, the microcrystalline semiconductor film 61, the buffer layer 62,and the channel protective layer 80 (FIG. 3A). A mask 66 is formed overthe semiconductor film 63 and the conductive films 65 a to 65 c. Themask 66 is formed by a photolithography technique or an ink-jet method.

In the case where an n-channel thin film transistor is formed using thesemiconductor film 63, phosphorus may be added as a typical impurityelement to the semiconductor film 63, and an impurity gas such as PH₃may be added to silicon hydride. In addition, when a p-channel thin filmtransistor is formed, boron may be added as a typical impurity element,and an impurity gas such as B₂H₆ may be added to silicon hydride. Thesemiconductor film 63 can be formed using a microcrystallinesemiconductor film or an amorphous semiconductor film and may have athickness of from 2 nm to 50 nm (preferably, from 10 nm to 30 nm).

It is preferable that the conductive film be formed using a single layeror a stacked layer of aluminum, copper, or an aluminum alloy to which anelement to improve resistance to heat or an element which prevents ahillock such as silicon, titanium, neodymium, scandium, or molybdenum isadded. Alternatively, the conductive film may have a layered structurein which a film on the side in contact with the semiconductor film towhich an impurity imparting one conductivity type is added is formed oftitanium, tantalum, molybdenum, tungsten, or a nitride of any of theseelements and an aluminum film or an aluminum alloy film is formedthereover. Still alternatively, the conductive film may have a layeredstructure in which an aluminum film or an aluminum alloy film issandwiched between upper and lower films of titanium, tantalum,molybdenum, tungsten, or a nitride of any of these elements. Here, asthe conductive film, a conductive film with a three-layer structure inwhich the conductive films 65 a to 65 c are stacked is described. Alayered conductive film in which molybdenum films are used as theconductive films 65 a and 65 c and an aluminum film is used as theconductive film 65 b, or a layered conductive film in which titaniumfilms are used as the conductive films 65 a and 65 c and an aluminumfilm is used as the conductive film 65 b can be given.

The conductive films 65 a to 65 c are formed by a sputtering method or avacuum evaporation method. Alternatively, the conductive films 65 a to65 c may be formed by discharging a conductive nanopaste of silver,gold, copper, or the like by a screen printing method, an ink-jetmethod, or the like and baking it.

Next, the conductive films 65 a to 65 c are etched using the mask 66 toform source and drain electrodes 71 a to 71 c (FIG. 3B). When theconductive films 65 a to 65 c are subjected to wet etching as in thisembodiment mode as shown in FIG. 3B, the conductive films 65 a to 65 care isotropically etched. Thus, end portions of the mask 66 and endportions of the source and drain electrodes 71 a to 71 c are notaligned, and the end portions of the source and drain electrodes 71 a to71 c further recede. After that, the semiconductor film 63 is etchedusing the mask 66 to form source and drain regions 72 (FIG. 3C). Notethat the buffer layer 62 is not etched because the channel protectivelayer 80 functions as a channel stopper.

The end portions of the source and drain electrodes 71 a to 71 c are notaligned with the end portions of the source and drain regions 72, andthe end portions of the source and drain regions 72 are formed outsideof the end portions of the source and drain electrodes 71 a to 71 c.After that, the mask 66 is removed. Note that FIG. 3C is across-sectional view of a cross section taken along a line A-B in FIG.4C. As shown in FIG. 4C, it can be seen that the end portions of thesource and drain regions 72 are positioned outside of the end portionsof the source and drain electrodes 71 c. In other words, it can be seenthat an area of the source and drain regions 72 is larger than that ofthe source and drain electrodes 71 a to 71 c. One of the source anddrain electrodes also functions as a source or drain wiring.

With such a shape as shown in FIG. 3C in which the end portions of thesource and drain electrodes 71 a to 71 c are not aligned with the endportions of the source and drain regions 72, the end portions of thesource and drain electrodes 71 a to 71 c are more apart from each other;therefore, leakage current and short circuit between the source anddrain electrodes can be prevented. In other words, it can be seen thatthe source and drain regions extend beyond edges of the source and drainelectrodes, and a distance between edges of the source and drain regionsfacing each other is shorter than a distance between the edges of thesource and drain electrodes facing each other. Accordingly, a thin filmtransistor with high reliability and high resistance to voltage can bemanufactured.

Through the above-described process, the channel stop (protective) typethin film transistor 74 can be formed.

The buffer layer 62 below the source and drain regions 72 and the bufferlayer 62 over the channel formation region of the microcrystallinesemiconductor film 61 are a continuous film formed using the samematerial at the same time. The buffer layer 62 over the microcrystallinesemiconductor film 61 blocks external air and an etching residue withhydrogen included therein and protects the microcrystallinesemiconductor film 61.

The buffer layer 62 which does not include an impurity element impartingone conductivity type is provided, whereby an impurity element impartingone conductivity type, which is included in the source and drainregions, and an impurity element imparting one conductivity type, whichis used for controlling threshold voltage of the microcrystallinesemiconductor film 61, can be prevented from being mixed to each other.When impurity elements imparting one conductivity type are mixed witheach other, a recombination center is generated, which leads to flow ofleakage current and loss of the effect of reducing off current.

By provision of the buffer layer and the channel protective layer asdescribed above, a channel stop type thin film transistor with highresistance to voltage, in which leakage current is reduced, can bemanufactured. Accordingly, the thin film transistor has high reliabilityand can be suitably used for a liquid crystal display device to which avoltage of 15 V is applied.

Next, the pixel electrode 77 is formed so as to be in contact with thesource or drain electrode 71 c. The insulating film 76 is formed overthe source and drain electrodes 71 a to 71 c, the source and drainregions 72, the channel protective layer 80, the gate insulating film 52b, and the pixel electrode 77. The insulating film 76 can be formed in amanner similar to the gate insulating films 52 a and 52 b. Note that theinsulating film 76 prevents intrusion of a contaminating impurity suchas an organic matter, a metal, or water vapor contained in theatmosphere; thus, a dense film is preferably used for the insulatingfilm 76.

The buffer layer 62 is preferably formed with a thickness of 10 nm to 50nm, inclusive. The buffer layer 62 over the channel formation region ofthe microcrystalline semiconductor film 61 is not etched, so that thebuffer layer 62 is not needed to be formed thickly and film-formationtime can be shortened. In addition, the total concentration of nitrogen,carbon, and oxygen contained in the buffer layer is preferably set at1×10²⁰ atoms/cm³ to 15×10²⁰ atoms/cm³. With the above concentration,also the buffer layer 62 having a thickness of 10 nm to 50 nm,inclusive, can function as a high-resistance region.

Alternatively, the buffer layer 62 may be formed with a thickness of 150nm to 200 nm, inclusive, and the concentration of carbon, nitrogen, andoxygen contained in the buffer layer 62 may be set at less than or equalto 3×10¹⁹ atoms/cm³, preferably, less than or equal to 5×10¹⁸ atoms/cm³.In this case, when the insulating film 76 is formed of a silicon nitridefilm, the oxygen concentration in the buffer layer 62 can be set at lessthan or equal to 5×10¹⁹ atoms/cm³, preferably, less than or equal to1×10¹⁹ atoms/cm³.

Next, the insulating film 76 is etched so that part of the pixelelectrode 77 is exposed. A liquid crystal element is formed to be incontact with an exposed region of the pixel electrode 77, so that thethin film transistor 74 and the liquid crystal element can beelectrically connected to each other. For example, an alignment film isformed over the pixel electrode 77, a counter electrode provided withanother alignment film is made to face the alignment film over the pixelelectrode 77, and a liquid crystal layer is formed between the alignmentfilms.

For the pixel electrode 77, a conductive material having alight-transmitting property, such as indium oxide which containstungsten oxide, indium zinc oxide which contains tungsten oxide, indiumoxide which contains titanium oxide, indium tin oxide which containstitanium oxide, indium tin oxide (hereinafter ITO), indium zinc oxide,or indium tin oxide to which silicon oxide has been added can be used.

The pixel electrode 77 can be formed using a conductive compositioncontaining a conductive high-molecular compound (also referred to as aconductive polymer). It is preferable that the pixel electrode formedusing the conductive composition have a sheet resistance of less than orequal to 10000 Ω/square and a light transmittance of greater than orequal to 70% at a wavelength of 550 nm. In addition, it is preferablethat the resistivity of the conductive high-molecular compound containedin the conductive composition be less than or equal to 0.1 χ·cm.

As a conductive high-molecular compound, a so-called π electronconjugated conductive high-molecular compound can be used. For example,polyaniline or a derivative thereof, polypyrrole or a derivativethereof, polythiophene or a derivative thereof, and a copolymer of twoor more kinds of them can be given.

The end portions of the source and drain regions and the end portions ofthe source and drain electrodes may be aligned with each other. FIG. 26shows a thin film transistor 79 of a channel stop type in which the endportions of the source and drain regions and the end portions of thesource and drain electrodes are aligned with each other. When the sourceand drain electrodes and the source and drain regions are subjected todry etching, a shape like the thin film transistor 79 can be obtained.Alternatively, also when the semiconductor film to which an impurityelement imparting one conductivity type is added is etched using thesource and drain electrodes as a mask to form the source and drainregions, a shape like the thin film transistor 79 can be obtained.

When the thin film transistor is formed as a channel stop type thin filmtransistor, reliability of the thin film transistor can be improved. Byformation of a channel formation region with a microcrystallinesemiconductor film, a field-effect mobility of 1 cm²N·sec to 20cm²/V·sec can be achieved. Accordingly, this thin film transistor can beused as a switching element of a pixel in a pixel portion and as anelement included in a scanning line (gate line) driver circuit.

According to this embodiment mode, a liquid crystal display deviceincluding a thin film transistor with high electric characteristics andhigh reliability can be manufactured.

Embodiment Mode 2

This embodiment mode will describe an example of a thin film transistorwhose shape is different from that of Embodiment Mode 1. Except theshape, the thin film transistor can be formed in a similar manner toEmbodiment Mode 1; thus, repetitive description of the same componentsor components having similar functions as in Embodiment Mode 1 andmanufacturing steps for forming those components will be omitted.

This embodiment mode will describe a thin film transistor which is usedfor a liquid crystal display device and a manufacturing process of thethin film transistor with reference to FIG. 5, FIGS. 6A to 6D, and FIG.27. FIG. 5 and FIG. 27 are cross-sectional views showing a thin filmtransistor and a pixel electrode, and FIGS. 6A to 6D are plane viewsshowing a region in a pixel where the thin film transistor and the pixelelectrode are connected to each other. FIG. 5 and FIG. 27 arecross-sectional views showing the thin film transistor in a crosssection taken along a line Q-R in FIGS. 6A to 6D, and a manufacturingprocess thereof.

FIG. 5 and FIGS. 6A to 6D show a bottom gate thin film transistor 274 ofa channel stop type (also referred to as a channel protective type) ofthis embodiment mode.

In FIG. 5, the channel stop type thin film transistor 274 is providedover a substrate 250. The channel stop thin film transistor 274 includesa gate electrode 251, gate insulating films 252 a and 252 b, amicrocrystalline semiconductor film 261, a buffer layer 262, a channelprotective layer 280, source and drain regions 272, and source and drainelectrodes 271 a, 271 b, and 271 c. An insulating film 276 is providedso as to cover the thin film transistor 274. A pixel electrode 277 isprovided so as to be in contact with the source or drain electrode 271 cin a contact hole formed in the insulating film 276. Note that FIG. 5corresponds to FIG. 6D.

The channel protective layer 280 is provided over a channel formationregion of the microcrystalline semiconductor film 261 with the bufferlayer 262 interposed therebetween. Thus, damage which is caused in themanufacturing process to the buffer layer 262 over the channel formationregion of the microcrystalline semiconductor film 261 (such as reductionin film thickness due to radicals in plasma or an etching agent inetching, or oxidation) can be prevented. Therefore, reliability of thethin film transistor 274 can be improved. The buffer layer 262 over thechannel formation region of the microcrystalline semiconductor film 261is not etched, so that the buffer layer 262 is not needed to be formedthickly and film-formation time can be shortened.

Hereinafter, a manufacturing method will be described with reference toFIGS. 6A to 6D. The gate electrode 251 is formed over the substrate 250(FIG. 6A). The gate insulating films 252 a and 252 b are formed over thegate electrode 251, and the microcrystalline semiconductor film 261 andthe buffer layer 262 are formed thereover. Over the buffer layer 262,the channel protective layer 280 is formed so as to overlap with thechannel formation region of the microcrystalline semiconductor film(FIG. 6B).

Embodiment Mode 1 shows an example in which, after formation of thechannel protective layer 80, the microcrystalline semiconductor film 53and the buffer layer 54 are processed into the island-shapedmicrocrystalline semiconductor film 61 and the island-shaped bufferlayer 62, respectively, by etching. However, this embodiment mode showsan example in which the microcrystalline semiconductor film and thebuffer layer are etched at the same time when a conductive film to bethe source and drain electrodes and a semiconductor film to which animpurity element imparting one conductivity type is added are etched.Therefore, the microcrystalline semiconductor film, the buffer layer,the semiconductor film to which an impurity element imparting oneconductivity type is added, and the conductive film to be the source anddrain electrodes are etched using the same mask. When themicrocrystalline semiconductor film, the buffer layer, the semiconductorfilm to which an impurity element imparting one conductivity type isadded, and the conductive film to be the source and drain electrodes areetched by one etching process, the manufacturing process can besimplified, and the number of masks used in the etching process can bereduced.

The microcrystalline semiconductor film, the buffer layer, thesemiconductor film to which an impurity element imparting oneconductivity type is added, and the conductive film are etched, so thatthe microcrystalline semiconductor film 261, the buffer layer 262, thesource and drain regions 272, and the source and drain electrodes 271 ato 271 c are formed. In this manner, the channel stop type thin filmtransistor 274 is formed (FIG. 6C). The insulating film 276 is formed soas to cover the thin film transistor 274, and the contact hole whichexposes the source or drain electrode 271 c is formed. The pixelelectrode 277 is formed in the contact hole, so that the thin filmtransistor 274 and the pixel electrode 277 are electrically connected toeach other (FIG. 6D).

The end portions of the source and drain regions and the end portions ofthe source and drain electrodes may be aligned with each other. FIG. 27shows a thin film transistor 279 of a channel stop type in which the endportions of the source and drain regions and the end portions of thesource and drain electrodes are aligned with each other. When the sourceand drain electrodes and the source and drain regions are subjected todry etching, a shape like the thin film transistor 279 can be obtained.Alternatively, also when the semiconductor film to which an impurityelement imparting one conductivity type is added is etched using thesource and drain electrodes as a mask to form the source and drainregions, a shape like the thin film transistor 279 can be obtained.

When the thin film transistor is formed as a channel stop type thin filmtransistor, reliability of the thin film transistor can be improved. Byformation of a channel formation region with a microcrystallinesemiconductor film, a field-effect mobility of 1 cm²/V·sec to 20cm²/V·sec can be achieved. Accordingly, this thin film transistor can beused as a switching element of a pixel in a pixel portion and as anelement included in a scanning line (gate line) driver circuit.

According to this embodiment mode, a liquid crystal display deviceincluding a thin film transistor with high electric characteristics andhigh reliability can be manufactured.

Embodiment Mode 3

This embodiment mode will describe an example of a manufacturing processin which a microcrystalline semiconductor film is irradiated with alaser beam.

A gate electrode is formed over a substrate, and a gate insulating filmis formed so as to cover the gate electrode. Then, a microcrystallinesilicon (SAS) film is formed as a microcrystalline semiconductor filmover the gate insulating film. The thickness of the microcrystallinesemiconductor film is greater than or equal to 1 nm and less than 15 nm,preferably 2 nm to 10 nm, inclusive. In particular, the microcrystallinesemiconductor film with a thickness of 5 nm (4 nm to 8 nm) has highabsorptance of a laser beam and improves productivity.

In the case where the microcrystalline semiconductor film is formed overthe gate insulating film by a plasma CVD method or the like, near theinterface between the gate insulating film and a semiconductor filmwhich contains crystals, a region which contains more amorphouscomponents than the semiconductor film which contains crystals (heresuch a region is referred to as an interface region) is formed in somecases. In addition, in the case where an ultra-thin microcrystallinesemiconductor film with a thickness of about less than or equal to 10 nmis formed by a plasma CVD method or the like, although a semiconductorfilm which contains microcrystal grains can be formed, it is difficultto obtain a semiconductor film which contains microcrystal grains whichhas high quality uniformly throughout the film. In these cases, a laserprocess of irradiation with a laser beam to be described below iseffective.

Next, the surface of the microcrystalline silicon film is irradiatedwith a laser beam having such an energy density that themicrocrystalline silicon film is not melted. This laser process(hereinafter also referred to as “LP”) of this embodiment mode involvessolid-phase crystal growth which is performed by radiation heatingwithout the microcrystalline silicon film being melted. That is, theprocess utilizes a critical region where a deposited semi-amorphoussilicon film is not brought into a liquid phase, and in that sense, theprocess can also be referred to as “critical growth”.

The laser beam can affect a region to the interface between themicrocrystalline silicon film and the gate insulating film. Accordingly,using the crystals on the surface side of the microcrystalline siliconfilm as nuclei, solid-phase crystal growth advances from the surfacetoward the interface with the gate insulating film, and roughlycolumn-like crystals grow. The solid-phase crystal growth by the LPprocess is not to increase the size of crystal grains but rather toimprove crystallinity in a film thickness direction.

In the LP process, for example, a microcrystalline silicon film over aglass substrate of 730 mm×920 mm can be processed by a single laser beamscan, by collecting a laser beam into a long rectangular shape (a linearlaser beam). In this case, the proportion of overlap of linear laserbeams (the overlap rate) is set to be 0% to 90% (preferably, 0% to 67%).Accordingly, processing time for each substrate can be shortened, andthe productivity can be increased. The shape of the laser beam is notlimited to a linear shape, and similar processing can be conducted usinga planar laser beam. In addition, the LP process of this embodiment modeis not limited to be used for the glass substrate of the above size andcan be used for substrates of various sizes.

The LP process has effects in improving crystallinity of an interfaceregion with the gate insulating film and improving electriccharacteristics of a thin film transistor having a bottom gate structurelike the thin film transistor of this embodiment mode.

In such critical growth, there is also a feature in that unevenness (aprojecting body called a ridge), which is observed on the surface ofconventional low-temperature polysilicon, is not formed and thesmoothness of silicon surface is maintained after the LP process.

A crystalline silicon film which is obtained by the action of the laserbeam directly on the microcrystalline silicon film after the formationas in this embodiment mode is distinctly different in growth mechanismand film quality from a conventional microcrystalline silicon film whichis obtained by being just deposited and a microcrystalline silicon filmwhich is modified by conduction heating (the one disclosed in Reference1). In this specification, a crystalline semiconductor film which isobtained through LP process performed to a microcrystallinesemiconductor film after the formation is referred to as an LPSAS film.

After the microcrystalline semiconductor film such as an LPSAS film isformed, an amorphous silicon (a-Si:H) film is formed as a buffer layerby a plasma CVD method at 300° C. to 400° C. By formation of theamorphous silicon film, hydrogen is supplied to the LPSAS film, and thesame effect as in the case of hydrogenation of the LPSAS film can beachieved. In other words, by formation of the amorphous silicon filmover the LPSAS film, hydrogen is diffused into the LPSAS film, so that adangling bond can be terminated.

Subsequent manufacturing steps are similar to those in EmbodimentMode 1. A channel protective layer is formed, and a mask is formedthereover. Next, the microcrystalline semiconductor film and the bufferlayer are etched using the mask. Then, a semiconductor film to which animpurity element imparting one conductivity type is added and aconductive film are formed, and a mask is formed over the conductivefilm. The conductive film is etched using the mask, so that source anddrain electrodes are formed. Further, using the same mask, thesemiconductor film to which an impurity element imparting oneconductivity type is added is etched using the channel protective layeras an etching stopper, so that source and drain regions are formed.

Through the above process, a channel stop type thin film transistor canbe formed, and a liquid crystal display device including the channelstop type thin film transistor can be manufactured.

This embodiment mode can be freely combined with Embodiment Mode 1 or 2.

Embodiment Mode 4

This embodiment mode will describe an example of a manufacturing processof a liquid crystal display device in Embodiment Modes 1 to 3 in detail.Therefore, repetitive description of the same components or componentshaving similar functions as in Embodiment Modes 1 to 3 and manufacturingsteps for forming those components will be omitted.

In Embodiment Modes 1 to 3, before the microcrystalline semiconductorfilm is formed, a reaction chamber may be subjected to cleaning andflush (washing) treatment (hydrogen flush using hydrogen as a flushsubstance, silane flush using silane as a flush substance, or the like).By the flush treatment, a film to be formed can be prevented from beingcontaminated by an impurity such as oxygen, nitrogen, or fluorine in areaction chamber.

By the flush treatment, an impurity element such as oxygen, nitrogen, orfluorine in a reaction chamber can be removed. For example, silane flushtreatment is performed in the following manner: a plasma CVD apparatusis used, and monosilane is used as a flush substance and introduced to achamber at a gas flow rate of 8 SLM to 10 SLM for 5 to 20 minutes,preferably 10 to 15 minutes. Note that 1 SLM is 1000 sccm, that is, 0.06m³/h.

The cleaning can be performed with the use of, for example, fluorineradicals. Note that a reaction chamber can be cleaned with the use offluorine radicals in the following manner: carbon fluoride, nitrogenfluoride, or fluorine is introduced to a plasma generator providedoutside the reaction chamber and the gas is dissociated, and thefluorine radials are introduced to the reaction chamber.

The flush treatment may also be performed before the gate insulatingfilm, the buffer layer, the channel protective layer, and thesemiconductor film to which an impurity element imparting oneconductivity type is added are formed. Note that the flush treatment iseffective when it is performed after cleaning.

Before a substrate is carried into a reaction chamber to perform filmformation, the inner wall of each reaction chamber may be coated with aprotective film that is a film to be formed (this coating is alsoreferred to as pre-coating treatment). Pre-coating treatment istreatment in which plasma treatment is performed by flowing of adeposition gas in a reaction chamber to coat the inner wall of thereaction chamber with a thin protective film in advance. For example,before a microcrystalline silicon film is formed as the microcrystallinesemiconductor film, pre-coating treatment may be performed in which theinner wall of the reaction chamber is coated with an amorphous siliconfilm with a thickness of 0.2 μm to 0.4 μm. Flush treatment may beperformed after pre-coating treatment (hydrogen flush, silane flush, orthe like). In the case of performing cleaning and pre-coating treatment,it is necessary that a substrate be carried out from a reaction chamber.However, in the case of performing flush treatment (hydrogen flush,silane flush, or the like), a substrate may be in a reaction chamberbecause plasma treatment is not performed.

A protective film formed of an amorphous silicon film is formed on theinner wall of a reaction chamber in which a microcrystalline siliconfilm is formed, and hydrogen plasma treatment is performed before filmformation. In this case, the protective film is etched and an extremelysmall amount of silicon is deposited on a substrate. The silicon can bea nucleus of crystal growth.

By the pre-coating treatment, a film to be formed can be prevented frombeing contaminated by an impurity such as oxygen, nitrogen, or fluorinein a reaction chamber.

The pre-coating treatment may be performed before formation of a gateinsulating film and a semiconductor film to which an impurity elementimparting one conductivity type is added.

An example of a method for forming a gate insulating film, amicrocrystalline semiconductor film, and a buffer layer is described indetail.

FIGS. 10A and 10B each show an example of a plasma CVD apparatus whichcan be used for the present invention. FIGS. 10A and 10B each show amicrowave plasma CVD apparatus which can perform successive filmformation. FIGS. 10A and 10B are plane views each schematically showinga microwave plasma CVD apparatus. A loading chamber 1110, an unloadingchamber 1115, and reaction chambers (1) 1111 to (4) 1114 are providedaround a common chamber 1120. Gate valves 1122 to 1127 are providedbetween the common chamber 1120 and each chamber so that treatment ineach chamber does not have influence on treatment in other chambers.Note that the number of reaction chambers is not limited to four, andthe number of reaction chambers may be more than four or less than four.When the number of reaction chambers is large, reaction chambers can beallocated according to a kind of a film to be formed; thus, the numberof cleaning of the reaction chamber can be reduced. FIG. 10A shows anexample of a microwave plasma CVD apparatus provided with four reactionchambers, and FIG. 10B shows an example of a microwave plasma CVDapparatus provided with three reaction chambers.

An example is described in which a gate insulating layer, amicrocrystalline semiconductor film, a buffer layer, and a channelprotective layer are formed using a plasma CVD apparatus shown in FIGS.10A and 10B. Substrates are set in a cassette 1128 and a cassette 1129of the loading chamber 1110 and the unloading chamber 1115, andtransferred to the reaction chambers (1) 1111 to (4) 1114 by a transferunit 1121 of the common chamber 1120. In this apparatus, reactionchambers can be allocated according to the films to be deposited, and aplurality of different films can be formed successively without beingexposed to the atmosphere. In addition, the reaction chamber is alsoused as a reaction chamber for performing an etching process or laserirradiation process, in addition to a film-formation process. Whenreaction chambers for various processes are provided, various processescan be performed without exposing the substrate to the atmosphere.

In each of the reaction chambers (1) to (4), the gate insulating film,the microcrystalline semiconductor film, the buffer layer, and thechannel protective layer are stacked. In this case, the plurality ofdifferent kinds of films can be stacked successively by changing sourcegases. Further, in this case, after the gate insulating film is formed,silicon hydride such as silane is introduced to the reaction chamber sothat an oxygen residue is reacted with silicon hydride, and the reactantis ejected outside the reaction chamber; thus, the concentration of anoxygen residue in the reaction chamber can be reduced. Accordingly, theconcentration of oxygen contained in the microcrystalline semiconductorfilm can be reduced. In addition, crystal grains included in themicrocrystalline semiconductor film can be prevented from beingoxidized.

Further, in a plasma CVD apparatus, films of one kind may be formed in aplurality of reaction chambers in order to improve productivity. Whenfilms of one kind can be formed in a plurality of reaction chambers,films can be concurrently formed over a plurality of substrates. Forexample, in FIG. 10A, the reaction chambers (1) and (2) are used asreaction chambers in each of which a microcrystalline semiconductor filmis formed, the reaction chamber (3) is used as a reaction chamber inwhich an amorphous semiconductor film is formed, and the reactionchamber (4) is used as a reaction chamber in which a channel protectivelayer is formed. In the case where a plurality of substrates isconcurrently treated as described above, a plurality of reactionchambers is provided, in each of which a film with a low deposition rateis formed, so that productivity can be improved.

Before a substrate is carried into a reaction chamber to perform filmformation, it is preferable to perform cleaning, flush (washing)treatment (hydrogen flush, silane flush, or the like), and coating bywhich the inner wall of each reaction chamber is coated with aprotective film that is a film to be formed (this coating is alsoreferred to as pre-coating treatment). Pre-coating treatment istreatment in which plasma treatment is performed by flowing of adeposition gas in a reaction chamber to coat the inner wall of thereaction chamber with a thin protective film in advance. For example,before a microcrystalline silicon film is formed as the microcrystallinesemiconductor film, pre-coating treatment may be performed in which theinner wall of the reaction chamber is coated with an amorphous siliconfilm with a thickness of 0.2 μm to 0.4 μm. Flush treatment (hydrogenflush, silane flush, or the like) may be performed after pre-coatingtreatment. In the case of performing cleaning and pre-coating treatment,it is necessary that the substrate be carried out from a reactionchamber. However, in the case of performing flush treatment (hydrogenflush, silane flush, or the like), a substrate may be in a reactionchamber because plasma treatment is not performed.

A protective film formed of an amorphous silicon film is formed on theinner wall of a reaction chamber in which a microcrystalline siliconfilm is formed, and hydrogen plasma treatment is performed before filmformation. In this case, the protective film is etched and an extremelysmall amount of silicon is deposited on a substrate. The silicon can bea nucleus of crystal growth.

In this manner, with use of the microwave plasma CVD apparatus in whichthe plurality of chambers is connected, the gate insulating film, themicrocrystalline semiconductor film, the buffer layer, the channelprotective layer, and the semiconductor film to which an impurityelement imparting one conductivity type is added can be concurrentlyformed; thus, the mass productivity can be enhanced. Further, also whenone reaction chamber is being subjected to maintenance or cleaning, thefilms can be formed in other reaction chambers, and the films can beformed efficiently. In addition, an interface between the films can beformed without being contaminated by atmospheric components or impurityelements contained in the atmosphere; thus, variation in characteristicsof the thin film transistors can be reduced.

With use of the microwave plasma CVD apparatus having such a structure,films of similar kinds or one kind can be formed in each reactionchamber, and the films can be successively formed without being exposedto the atmosphere. Thus, an interface between the films can be formedwithout being contaminated by a residue of another film which hasalready been formed or impurity elements contained in the atmosphere.

Further, a microwave generator and a high frequency wave generator maybe provided; thus, the gate insulating film, the microcrystallinesemiconductor film, the channel protective layer, and the semiconductorfilm to which an impurity element imparting one conductivity type isadded may be formed by a microwave plasma CVD method, and the bufferlayer may be formed by a high frequency plasma CVD method.

Although the microwave plasma CVD apparatus in FIGS. 10A and 10B isprovided with the loading chamber and the unloading chamber separately,a loading chamber and an unloading chamber may be combined and aloading/unloading chamber may be provided. In addition, the microwaveplasma CVD apparatus may be provided with a spare chamber. Bypre-heating of the substrate in the spare chamber, it is possible toshorten heating time before formation of the film in each reactionchamber, so that the throughput can be improved. In the film-formationtreatment, a gas supplied from a gas supply portion may be selected inaccordance with its purpose.

This embodiment mode can be combined with the structure disclosed inother embodiment modes, as appropriate.

Embodiment Mode 5

This embodiment mode will describe examples of liquid crystal displaydevices including the thin film transistors described in EmbodimentModes 1 to 4 with reference to FIGS. 12 to 25. A TFT 628 and a TFT 629used for liquid crystal display devices shown in FIGS. 12 to 25 can bemanufactured in a similar manner to the thin film transistor describedin Embodiment Mode 1 or 2 and have high electric characteristics andhigh reliability. The TFT 628 and the TFT 629 include a channelprotective layer 608 and a channel protective layer 611, respectively,and are inverted staggered thin film transistors includingmicrocrystalline semiconductor films as channel formation regions.

First, a vertical alignment (VA) liquid crystal display device isdescribed. The VA liquid crystal display device has a kind of form inwhich alignment of liquid crystal molecules of a liquid crystal displaypanel is controlled. The VA liquid crystal display device has a form inwhich liquid crystal molecules are vertical to a panel surface whenvoltage is not applied. In particular, in this embodiment mode, it isdevised that a pixel is divided into several regions (sub-pixels) sothat molecules are aligned in different directions in the respectiveregions. This is referred to as domain multiplication or multi-domaindesign. In the following description, a liquid crystal display devicewith multi-domain design is described.

FIG. 13 and FIG. 14 show a pixel electrode and a counter electrode,respectively. FIG. 13 is a plane view of a side of a substrate providedwith the pixel electrode. FIG. 12 shows a cross-sectional structurealong a line G-H in FIG. 13. FIG. 14 is a plane view of a side of asubstrate provided with the counter electrode. Hereinafter, descriptionis made with reference to these drawings.

FIG. 12 shows a state in which a substrate 600 provided with a TFT 628,a pixel electrode 624 connected to the TFT 628, and a storage capacitorportion 630 overlaps with a counter substrate 601 provided with acounter electrode 640 and the like, and liquid crystal is injectedtherebetween.

At the position where the counter substrate 601 is provided with aspacer 642, a light-blocking film 632, a first color film 634, a secondcolor film 636, a third color film 638, and the counter electrode 640are formed. With this structure, the height of a projection 644 forcontrolling alignment of the liquid crystal and the height of the spacer642 vary. An alignment film 648 is formed over the pixel electrode 624.Similarly, the counter electrode 640 is also provided with an alignmentfilm 646. A liquid crystal layer 650 is formed between the alignmentfilms 646 and 648.

Although a columnar spacer is used for the spacer 642 in this embodimentmode, bead spacers may be dispersed. Further, the spacer 642 may also beformed over the pixel electrode 624 provided over the substrate 600.

The TFT 628, the pixel electrode 624 connected to the TFT 628, and thestorage capacitor portion 630 are formed over the substrate 600. Thepixel electrode 624 is connected to a wiring 618 via a contact hole 623which penetrates an insulating film 620 which covers the TFT 628, thewiring 618, and the storage capacitor portion 630 and also penetrates athird insulating film 622 which covers the insulating film 620. The thinfilm transistor described in Embodiment Mode 1 can be used as the TFT628 as appropriate. The storage capacitor portion 630 includes a firstcapacitor wiring 604 which is formed in a similar manner to a gatewiring 602 of the TFT 628, a gate insulating film 606, and a secondcapacitor wiring 617 which is formed in a similar manner to a wiring 616and the wiring 618. In FIGS. 12, 13, 14, and 15, in the TFT 628, amicrocrystalline semiconductor film, a buffer layer, semiconductor filmsto which an impurity element imparting one conductivity type is addedand which function as source and drain regions, and wirings which alsofunction as source and drain electrodes are patterned by the sameetching process and stacked with almost the same shape.

A liquid crystal element is formed by overlapping of the pixel electrode624, the liquid crystal layer 650, and the counter electrode 640.

FIG. 13 shows a structure over the substrate 600. The pixel electrode624 is formed using the material described in Embodiment Mode 1. Thepixel electrode 624 is provided with a slit 625. The slit 625 is forcontrolling alignment of the liquid crystal.

A TFT 629, a pixel electrode 626 connected to the TFT 629, and a storagecapacitor portion 631 shown in FIG. 13 can be formed in a similar mannerto the TFT 628, the pixel electrode 624, and the storage capacitorportion 630, respectively. Both the TFT 628 and the TFT 629 areconnected to the wiring 616. A pixel of this liquid crystal displaypanel includes the pixel electrodes 624 and 626. Each of the pixelelectrodes 624 and 626 is in a sub-pixel.

FIG. 14 shows a structure of the counter substrate side. The counterelectrode 640 is formed over the light-blocking film 632. The counterelectrode 640 is preferably formed using a material similar to that ofthe pixel electrode 624. The projection 644 for controlling alignment ofthe liquid crystal is formed over the counter electrode 640. Moreover,the spacer 642 is formed corresponding to the position of thelight-blocking film 632.

FIG. 15 shows an equivalent circuit of this pixel structure. Both theTFT 628 and the TFT 629 are connected to the gate wiring 602 and thewiring 616. In this case, when potentials of the capacitor wiring 604and a capacitor wiring 605 are different from each other, operations ofliquid crystal elements 651 and 652 can vary. That is, alignment of theliquid crystal is precisely controlled and a viewing angle is increasedby individual control of potentials of the capacitor wirings 604 and605.

When voltage is applied to the pixel electrode 624 provided with theslit 625, electric field distortion (an oblique electric field) isgenerated near the slit 625. The slit 625 and the projection 644 on thecounter substrate 601 side are alternately arranged in an engagingmanner, and thus, an oblique electric field is effectively generated tocontrol alignment of the liquid crystal, so that a direction ofalignment of the liquid crystal varies depending on location. That is, aviewing angle of the liquid crystal display panel is increased by domainmultiplication.

Next, another VA liquid crystal display device, which is different fromthe above-described device, is described with reference to FIG. 16, FIG.17, FIG. 18, and FIG. 19.

FIG. 16 and FIG. 17 each show a pixel structure of a VA liquid crystaldisplay panel. FIG. 17 is a plane view of a substrate 600. FIG. 16 showsa cross-sectional structure along a line Y-Z in FIG. 17. Hereinafter,description is made with reference to these drawings.

In this pixel structure, a plurality of pixel electrodes is included inone pixel, and a TFT is connected to each pixel electrode. Each TFT isdriven by a different gate signal. That is, this is a structure in whicha signal supplied to each pixel electrode is individually controlled ina multi-domain pixel.

Via a contact hole 623, a pixel electrode 624 is connected to a TFT 628through a wiring 618. Via a contact hole 627, a pixel electrode 626 isconnected to a TFT 629 through a wiring 619. A gate wiring 602 of theTFT 628 and a gate wiring 603 of the TFT 629 are separated so thatdifferent gate signals can be given thereto. In contrast, a wiring 616functioning as a data line is used in common for the TFTs 628 and 629.As each of the TFTs 628 and 629, the thin film transistor described inEmbodiment Mode 1 can be used as appropriate. Also, a capacitor wiring690 is provided. In FIGS. 16 to 25, in the TFT 628 and the TFT 629,semiconductor films to which an impurity element imparting oneconductivity type is added and which function as source and drainregions and wirings which also function as source and drain electrodesare patterned by the same etching process and stacked with almost thesame shape.

The pixel electrodes 624 and 626 have different shapes and are separatedby the slit 625. The pixel electrode 626 is formed so as to surround theexternal side of the pixel electrode 624 which is spread into a V shape.Timing of voltage application is made to vary between the pixelelectrodes 624 and 626 by the TFTs 628 and 629 in order to controlalignment of the liquid crystal. FIG. 19 shows an equivalent circuit ofthis pixel structure. The TFT 628 is connected to the gate wiring 602.The TFT 629 is connected to the gate wiring 603. When different gatesignals are supplied to the gate wirings 602 and 603, operation timingsof the TFTs 628 and 629 can vary.

A counter substrate 601 is provided with a light-blocking film 632, asecond color film 636, and a counter electrode 640. Moreover, aplanarization film 637 is formed between the second color film 636 andthe counter electrode 640 to prevent alignment disorder of the liquidcrystal. FIG. 18 shows a structure of the counter substrate side. A slit641 is formed in the counter electrode 640, which is used in commonbetween different pixels. The slit 641 and the slit 625 on the pixelelectrodes 624 and 626 side are alternately arranged in an engagingmanner; thus, an oblique electric field is effectively generated, andalignment of the liquid crystal can be controlled. Accordingly, adirection in which the liquid crystal is aligned can vary depending onlocation, and a viewing angle is increased.

A first liquid crystal element is formed by overlapping of the pixelelectrode 624, a liquid crystal layer 650, and the counter electrode640. A second liquid crystal element is formed by overlapping of thepixel electrode 626, the liquid crystal layer 650, and the counterelectrode 640. This is a multi-domain structure in which the firstliquid crystal element and the second liquid crystal element areincluded in one pixel.

Next, a horizontal electric field liquid crystal display device isdescribed. The horizontal electric field mode is a mode in which anelectric field is horizontally applied to liquid crystal molecules in acell, whereby the liquid crystal is driven to express a gray scale. Bythis method, a viewing angle can be increased to approximately 180degrees. Hereinafter, a liquid crystal display device employing thehorizontal electric field mode is described.

FIG. 20 shows a state in which a substrate 600 provided with a TFT 628and a pixel electrode 624 connected to the TFT 628 overlaps with acounter substrate 601, and liquid crystal is injected therebetween. Thecounter substrate 601 is provided with a light-blocking film 632, asecond color film 636, a planarization film 637, and the like. The pixelelectrode is provided on the substrate 600 side, and it is not providedon the counter substrate 601 side. A liquid crystal layer 650 is formedbetween the substrate 600 and the counter substrate 601.

A first pixel electrode 607, a capacitor wiring 604 connected to thefirst pixel electrode 607, and the TFT 628 described in Embodiment Mode1 are formed over the substrate 600. The first pixel electrode 607 canbe formed using a material similar to that of the pixel electrode 77described in Embodiment Mode 1. The first pixel electrode 607 is formedinto a shape which is compartmentalized roughly into a pixel shape. Notethat a gate insulating film 606 is formed over the first pixel electrode607 and the capacitor wiring 604.

Wirings 616 and 618 of the TFT 628 are formed over the gate insulatingfilm 606. The wiring 616 serves as a data line extending in onedirection, through which a video signal is transmitted in a liquidcrystal display panel, and is connected to a source region of the TFT628 and serves as one of a source electrode and a drain electrode. Thewiring 618 serves as the other of the source electrode and the drainelectrode, and is connected to a second pixel electrode 624.

A second insulating film 620 is formed over the wirings 616 and 618.Over the insulating film 620, the second pixel electrode 624 connectedto the wiring 618 via a contact hole formed in the insulating film 620is formed. The pixel electrode 624 is formed using a material similar tothat of the pixel electrode 77 described in Embodiment Mode 1.

In such a manner, the TFT 628 and the second pixel electrode 624connected to the TFT 628 are formed over the substrate 600. Note that astorage capacitor is formed between the first pixel electrode 607 andthe second pixel electrode 624.

FIG. 21 is a plane view showing a structure of the pixel electrode. FIG.20 shows a cross-sectional structure taken along a line O-P in FIG. 21.The pixel electrode 624 is provided with a slit 625. The slit 625 is forcontrolling alignment of the liquid crystal. In this case, an electricfield is generated between the first pixel electrode 607 and the secondpixel electrode 624. The thickness of the gate insulating film 606formed between the first pixel electrode 607 and the second pixelelectrode 624 is 50 nm to 200 nm, which is thin enough compared to theliquid crystal layer with a thickness of 2 μm to 10 μm. Accordingly, anelectric field is generated substantially in parallel (in a horizontaldirection) to the substrate 600. Alignment of the liquid crystal iscontrolled by the electric field. The liquid crystal molecules arehorizontally rotated using the electric field which is approximatelyparallel to the substrate. In this case, since the liquid crystalmolecules are parallel to the substrate in any state, contrast or thelike is less affected by change in angle of viewing, and a viewing angleis increased. Further, since both the first pixel electrode 607 and thesecond pixel electrode 624 are light-transmitting electrodes, anaperture ratio can be increased.

Next, another example of a horizontal electric field liquid crystaldisplay device is described.

FIG. 22 and FIG. 23 each show a pixel structure of an IPS liquid crystaldisplay device. FIG. 23 is a plane view. FIG. 22 shows a cross-sectionalstructure along a line I-J in FIG. 23. Hereinafter, description is madewith reference to these drawings.

FIG. 22 shows a state in which a substrate 600 provided with a TFT 628and a pixel electrode 624 connected to the TFT 628 overlaps with acounter substrate 601, and liquid crystal is injected therebetween. Thecounter substrate 601 is provided with a light-blocking film 632, asecond color film 636, a planarization film 637, and the like. The pixelelectrode is provided on the substrate 600 side, and it is not providedon the counter substrate 601 side. A liquid crystal layer 650 is formedbetween the substrate 600 and the counter substrate 601.

A common potential line 609 and the TFT 628 described in Embodiment Mode1 are formed over the substrate 600. The common potential line 609 canbe formed at the same time as a gate wiring 602 of the TFT 628. A firstpixel electrode 607 is formed into a shape which is compartmentalizedroughly into a pixel shape.

Wirings 616 and 618 of the TFT 628 are formed over a gate insulatingfilm 606. The wiring 616 serves as a data line extending in onedirection, through which a video signal is transmitted in a liquidcrystal display panel, and is connected to a source region of the TFT628 and serves as one of a source electrode and a drain electrode. Thewiring 618 serves as the other of the source electrode and the drainelectrode, and is connected to a second pixel electrode 624.

A second insulating film 620 is formed over the wirings 616 and 618.Over the insulating film 620, the second pixel electrode 624 connectedto the wiring 618 via a contact hole 623 formed in the insulating film620 is formed. The pixel electrode 624 is formed using a materialsimilar to that of the pixel electrode 77 described in EmbodimentMode 1. Note that as shown in FIG. 23, the pixel electrode 624 is formedso as to generate a horizontal electric field with a comb-shapedelectrode which is formed at the same time as the common potential line609. Moreover, the pixel electrode 624 is formed so that comb-teethportions of the pixel electrode 624 are alternately engaged with thecomb-shaped electrode which is formed at the same time as the commonpotential line 609.

Alignment of the liquid crystal is controlled by an electric fieldgenerated between a potential applied to the pixel electrode 624 and apotential of the common potential line 609. The liquid crystal moleculesare horizontally rotated using the electric field which is approximatelyparallel to the substrate. In this case, since the liquid crystalmolecules are parallel to the substrate in any state, contrast or thelike is less affected by change in angle of viewing, and a viewing angleis increased.

In such a manner, the TFT 628 and the pixel electrode 624 connected tothe TFT 628 are formed over the substrate 600. A storage capacitor isformed by the common potential line 609, a capacitor electrode 615, andthe gate insulating film 606 provided therebetween. The capacitorelectrode 615 and the pixel electrode 624 are connected via a contacthole 633.

Next, a mode of a TN liquid crystal display device is described.

FIG. 24 and FIG. 25 each show a pixel structure of a TN liquid crystaldisplay device. FIG. 25 is a plane view. FIG. 24 shows a cross-sectionalstructure along a line K-L in FIG. 25. Hereinafter, description is madewith reference to these drawings.

A pixel electrode 624 is connected to a TFT 628 through a wiring 618 viaa contact hole 623. A wiring 616 functioning as a data line is connectedto the TFT 628. As the TFT 628, any of the TFTs described in EmbodimentMode 1 can be used.

The pixel electrode 624 is formed using the pixel electrode 77 describedin Embodiment Mode 1.

A counter substrate 601 is provided with a light-blocking film 632, asecond color film 636, and a counter electrode 640. A planarization film637 is formed between the second color film 636 and the counterelectrode 640 to prevent alignment disorder of liquid crystal. A liquidcrystal layer 650 is formed between the pixel electrode 624 and thecounter electrode 640, with alignment films 648 and 649 interposed.

A liquid crystal element is formed by overlapping of the pixel electrode624, the liquid crystal layer 650, and the counter electrode 640.

The substrate 600 or the counter substrate 601 may also be provided witha color filter, a blocking film (a black matrix) for preventingdisclination, or the like. Further, a polarizing plate is attached to asurface of the substrate 600, which is opposite to a surface on whichthe thin film transistor is formed. Moreover, a polarizing plate isattached to a surface of the counter substrate 601, which is opposite toa surface on which the counter electrode 640 is formed.

Through the above-described steps, the liquid crystal display device canbe formed. Since a thin film transistor with small off current, highelectric characteristics, and high reliability is used for the liquidcrystal display device of this embodiment mode, the liquid crystaldisplay device has high contrast and high visibility.

Embodiment Mode 6

This embodiment mode will describe below a structure of a liquid crystaldisplay panel (also referred to as a liquid crystal panel) which is onemode of the liquid crystal display device of the present invention.

FIG. 9A shows a mode of a liquid crystal display panel in which a pixelportion 6012 formed over a substrate 6011 is connected to a signal linedriver circuit 6013 which is separately formed. The pixel portion 6012and a scanning line driver circuit 6014 are each formed with a thin filmtransistor which uses a microcrystalline semiconductor film. By formingthe signal line driver circuit with a thin film transistor by whichhigher mobility can be obtained compared to a thin film transistor usingthe microcrystalline semiconductor film, operation of the signal linedriver circuit which demands a higher driving frequency than that of thescanning line driver circuit can be stabilized. Note that the signalline driver circuit 6013 may be formed with a transistor using asingle-crystalline semiconductor, a thin film transistor using apolycrystalline semiconductor, or a thin film transistor using SOI. Thepixel portion 6012, the signal line driver circuit 6013, and thescanning line driver circuit 6014 are each supplied with potential of apower source, a variety of signals, and the like via an FPC 6015.

Note that the signal driver circuit and the scanning line driver circuitmay both be formed over the same substrate as that of the pixel portion.

Also, when the driver circuit is separately formed, a substrate providedwith the driver circuit is not always required to be attached to asubstrate provided with the pixel portion, and may be attached to, forexample, the FPC. FIG. 9B shows a mode of a liquid crystal display panelin which a signal line driver circuit 6023 is separately formed andconnected to a pixel portion 6022 and a scanning line driver circuit6024 which are formed over a substrate 6021. The pixel portion 6022 andthe scanning line driver circuit 6024 are each formed with a thin filmtransistor which uses a microcrystalline semiconductor film. The signalline driver circuit 6023 is connected to the pixel portion 6022 via anFPC 6025. The pixel portion 6022, the signal line driver circuit 6023,and the scanning line driver circuit 6024 are each supplied withpotential of a power source, a variety of signals, and the like via theFPC 6025.

Also, part of the signal line driver circuit or part of the scanningline driver circuit may be formed over the same substrate as that of thepixel portion using the thin film transistor which uses amicrocrystalline semiconductor film, and the rest may be formedseparately and electrically connected to the pixel portion. FIG. 9Cshows a mode of a liquid crystal display panel in which an analog switch6033 a included in the signal line driver circuit is formed over asubstrate 6031, over which a pixel portion 6032 and a scanning linedriver circuit 6034 are formed, and a shift register 6033 b included inthe signal line driver circuit is formed over a different substrateseparately and then attached to the substrate 6031. The pixel portion6032 and the scanning line driver circuit 6034 are each formed with thethin film transistor which uses a microcrystalline semiconductor film.The shift register 6033 b included in the signal line driver circuit isconnected to the pixel portion 6032 via an FPC 6035. The pixel portion6032, the signal line driver circuit, and the scanning line drivercircuit 6034 are each supplied with potential of a power source, avariety of signals, and the like via the FPC 6035.

As shown in FIGS. 9A to 9C, in the liquid crystal display device of thepresent invention, an entire driver circuit or part thereof can beformed over the same substrate as that of a pixel portion, using thethin film transistor which uses a microcrystalline semiconductor film.

Note that there are no particular limitations on a connection method ofa separately formed substrate, and a known method such as a COG method,a wire bonding method, or a TAB method can be used. Further, aconnection position is not limited to the position shown in FIGS. 9A to9C, as long as electrical connection is possible. Also, a controller, aCPU, a memory, or the like may be formed separately and connected.

Note that the signal line driver circuit used in the present inventionis not limited to a mode including only a shift register and an analogswitch. In addition to the shift register and the analog switch, anothercircuit such as a buffer, a level shifter, or a source follower may beincluded. Also, the shift register and the analog switch are not alwaysrequired to be provided, and for example, a different circuit such as adecoder circuit by which selection of signal lines is possible may beused instead of the shift register, and a latch or the like may be usedinstead of the analog switch.

Then, an external view and a cross section of a liquid crystal displaypanel which is one mode of the liquid crystal display device of thepresent invention will be described with reference to FIGS. 11A and 11B.FIG. 11A is a top view of a panel in which a thin film transistor 4010including a microcrystalline semiconductor film and a liquid crystalelement 4013 which are formed over a first substrate 4001 are sealedbetween the first substrate 4001 and a second substrate 4006 with asealant 4005, and FIG. 11B corresponds to a cross-sectional view of across section taken along a line M-N in FIG. 11A.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scanning line driver circuit 4004 which are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scanning line driver circuit 4004. Therefore, thepixel portion 4002 and the scanning line driver circuit 4004 as well asa liquid crystal 4008 are sealed between the first substrate 4001 andthe second substrate 4006 with the sealant 4005. A signal line drivercircuit 4003 formed over a substrate, which is prepared separately,using a polycrystalline semiconductor film is mounted at a regiondifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001. This embodiment mode will describe an example ofattaching the signal line driver circuit 4003 including a thin filmtransistor formed using a polycrystalline semiconductor film to thefirst substrate 4001. Alternatively, a signal line driver circuitincluding a thin film transistor, which is formed using asingle-crystalline semiconductor film, may be attached to the firstsubstrate 4001. FIG. 11B exemplifies a thin film transistor 4009 formedusing a polycrystalline semiconductor film, which is included in thesignal line driver circuit 4003.

The pixel portion 4002 and the scanning line driver circuit 4004 whichare provided over the first substrate 4001 each include a plurality ofthin film transistors. FIG. 11B exemplifies the thin film transistor4010 included in the pixel portion 4002. The thin film transistor 4010corresponds to a thin film transistor which uses a microcrystallinesemiconductor film and can be formed through the manufacturing stepsshown in Embodiment Modes 1 to 4.

In addition, reference numeral 4013 denotes a liquid crystal element. Apixel electrode 4030 of the liquid crystal element 4013 is electricallyconnected to the thin film transistor 4010 through a wiring 4040. Acounter electrode 4031 of the liquid crystal element 4013 is formed onthe second substrate 4006. The liquid crystal element 4013 correspondsto a region where the pixel electrode 4030 and the counter electrode4031 sandwich the liquid crystal 4008.

Note that as the first substrate 4001 and the second substrate 4006,glass, metal (typically, stainless steel), ceramics, or plastic can beused. As for plastic, an FRP (fiberglass-reinforced plastics) plate, aPVF (polyvinyl fluoride) film, a polyester film, or an acrylic resinfilm can be used. In addition, a sheet with a structure in which analuminum foil is sandwiched by a PVF film or a polyester film can beused.

A spherical spacer 4035 is provided to control a distance (a cell gap)between the pixel electrode 4030 and the counter electrode 4031. Aspacer which is obtained by etching an insulating film as selected mayalso be used.

A variety of signals and potential are supplied to the signal linedriver circuit 4003 which is formed separately, the scanning line drivercircuit 4004, or the pixel portion 4002 via wirings 4014 and 4015 froman FPC 4018.

In this embodiment mode, a connecting terminal 4016 is formed of thesame conductive film as that of the pixel electrode 4030 included in theliquid crystal element 4013. In addition, the wirings 4014 and 4015 areformed of the same conductive film as that of the wiring 4041.

The connecting terminal 4016 is electrically connected to a terminalincluded in the FPC 4018 through an anisotropic conductive film 4019.

Although not illustrated, the liquid crystal display device shown inthis embodiment mode includes an alignment film, a polarizing plate, andfurther, may include a color filter and a light-blocking film.

Note that FIGS. 11A and 11B show an example in which the signal linedriver circuit 4003 is formed separately and mounted on the firstsubstrate 4001, but this embodiment mode is not limited to thisstructure. The scanning line driver circuit may be separately formed andthen mounted, or only part of the signal line driver circuit or part ofthe scanning line driver circuit may be separately formed and thenmounted.

This embodiment mode can be implemented in combination with thestructures of other embodiment modes.

Embodiment Mode 7

Liquid crystal display devices and the like which are obtained accordingto the present invention can be used for liquid crystal display modules(also referred to as liquid crystal modules). That is, the presentinvention can be implemented in all electronic devices in which thesemodules are incorporated into a display portion.

As those kinds of electronic devices, cameras such as video cameras anddigital cameras; displays that can be mounted on a person's head(goggle-type displays); car navigation systems; projectors; car stereos;personal computers; portable information terminals (such as mobilecomputers, cellular phones, and electronic book readers); and the likecan be given. Examples of these devices are shown in FIGS. 7A to 7C.

FIG. 7A shows a television device. A television device can be completedby incorporation of a liquid crystal display module into a chassis asshown in FIG. 7A. A liquid crystal display panel including components upto an FPC is also referred to as a liquid crystal display module. A mainscreen 2003 is formed with a liquid crystal display module, and speakerunits 2009, operation switches, and the like are provided as accessoryequipment. In this manner, a television device can be completed.

As shown in FIG. 7A, a liquid crystal display panel 2002 using liquidcrystal elements is incorporated into a chassis 2001, and in addition toreception of general television broadcast by a receiver 2005,communication of information in one direction (from a transmitter to areceiver) or in two directions (between a transmitter and a receiver orbetween receivers) can be performed by connection to a wired or wirelesscommunication network via a modem 2004. Operations of the televisiondevice can be carried out using switches that are incorporated into thechassis or by a remote control device 2006 provided separately, and adisplay portion 2007 that displays information to be output may beprovided for the remote control device.

Furthermore, in a television device, a sub-screen 2008 may be formedusing a second liquid crystal display panel and used to display channelnumber, volume, and the like, in addition to the main screen 2003.

FIG. 8 shows a block diagram showing the main structure of a televisiondevice. A pixel portion 901 is formed in the liquid crystal displaypanel. A signal line driver circuit 902 and a scanning line drivercircuit 903 may be mounted on the liquid crystal display panel by a COGmethod.

As another external circuit, a video signal amplifier circuit 905 whichamplifies a video signal among signals received by a tuner 904, a videosignal processing circuit 906 which converts the signals output from thevideo signal amplifier circuit 905 into chrominance signalscorresponding to red, green, and blue, a control circuit 907 whichconverts the video signal into an input specification of the driver IC,and the like are provided on an input side of the video signal. Thecontrol circuit 907 outputs signals to a scanning line side and a signalline side. In the case of digital driving, a signal dividing circuit 908may be provided on the signal line side and an input digital signal maybe split into m pieces to be supplied.

Among signals received by the tuner 904, an audio signal is transmittedto an audio signal amplifier circuit 909, and the output thereof issupplied to a speaker 913 through an audio signal processing circuit910. A control circuit 911 receives control information of a receivingstation (reception frequency) or sound volume from an input portion 912and transmits signals to the tuner 904 and the audio signal processingcircuit 910.

The present invention is not limited to the television device and isalso applicable to various usages such as display mediums having a largearea, for example, a monitor of a personal computer, an informationdisplay board at a railway station, an airport, or the like, or anadvertisement display board on the street.

FIG. 7B shows an example of a cellular phone 2301. This cellular phone2301 has a display portion 2302, an operation portion 2303, and thelike. When the liquid crystal display device described in the precedingembodiment modes is applied to the display portion 2302, reliability andmass productivity of the cellular phone 2301 can be improved.

A portable computer shown in FIG. 7C includes a main body 2401, adisplay portion 2402, and the like. When the liquid crystal displaydevice described in the preceding embodiment modes is applied to thedisplay portion 2402, reliability and mass productivity of the portablecomputer can be improved.

This application is based on Japanese Patent Application Serial No.2007-190219 filed with Japan Patent Office on Jul. 20, 2007, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a gateelectrode; a gate insulating film over the gate electrode; amicrocrystalline semiconductor film including a channel formation regionover the gate insulating film; a channel protective layer over thechannel formation region of the microcrystalline semiconductor film; asource region and a drain region over the channel protective layer; asource electrode and a drain electrode over the source region and thedrain region; an insulating film over the channel protective layer, thesource electrode, and the drain electrode; a pixel electrode over theinsulating film, the pixel electrode being electrically connected to thesource electrode or the drain electrode; a spacer over the pixelelectrode, the spacer overlapping with the gate electrode; a counterelectrode over the spacer; and a light blocking film, a first colorfilter film, and a second color filter film over the counter electrode,wherein the light blocking film includes a region overlapping with thespacer, wherein each of the first color filter film and the second colorfilter film overlaps with the region, and wherein an entire portion ofthe microcrystalline semiconductor film is overlapped with the gateelectrode.
 2. A semiconductor device comprising: a substrate capable oftransmitting light; a gate wiring over the substrate; a gate insulatingfilm over the gate wiring; a semiconductor film comprising silicon, thesemiconductor film including a channel formation region over the gatewiring with the gate insulating film therebetween; a source electrodeand a drain electrode over the semiconductor film; an insulating filmover the semiconductor film, the source electrode, and the drainelectrode; and a pixel electrode over the insulating film, the pixelelectrode being electrically connected to the source electrode or thedrain electrode; a spacer over the pixel electrode, the spaceroverlapping with the gate wiring; a counter electrode over the spacer;and a light blocking film, a first color filter film, and a second colorfilter film over the counter electrode, wherein the light blocking filmincludes a region overlapping with the spacer, wherein each of the firstcolor filter film and the second color filter film overlaps with theregion, and wherein an entire portion of the semiconductor film isoverlapped with the gate wiring.
 3. The semiconductor device accordingto claim 1, wherein the semiconductor film is a microcrystallinesemiconductor film.
 4. The semiconductor device according to claim 2,wherein the gate insulating film comprises a first film and a secondfilm on the first film, the first film comprising silicon nitride orsilicon nitride oxide, and the second film comprising silicon oxide orsilicon oxynitride.
 5. The semiconductor device according to claim 2,wherein the insulating film comprises a silicon oxynitride.
 6. Thesemiconductor device according to claim 2, further comprising: a sourceregion and a drain region over the semiconductor film.
 7. Thesemiconductor device according to claim 2, further comprising: a firstsemiconductor film on the semiconductor film, wherein each of the sourceelectrode and the drain electrode is in contact with an upper surface ofthe first semiconductor film.
 8. The semiconductor device according toclaim 7, wherein the first semiconductor film has a larger band gap thanthe semiconductor film.
 9. A semiconductor device comprising: asubstrate capable of transmitting light; a gate wiring over thesubstrate; a gate insulating film over the gate wiring; a semiconductorfilm, the semiconductor film including a channel formation region overthe gate wiring with the gate insulating film therebetween; a sourceelectrode and a drain electrode over the semiconductor film; aninsulating film over the semiconductor film, the source electrode, andthe drain electrode; and a pixel electrode over the insulating film, thepixel electrode being electrically connected to the source electrode orthe drain electrode; a spacer over the pixel electrode, the spaceroverlapping with the gate wiring; a counter electrode over the spacer;and a light blocking film, a first color filter film, and a second colorfilter film over the counter electrode, wherein the light blocking filmincludes a region overlapping with the spacer, wherein each of the firstcolor filter film and the second color filter film overlaps with theregion, and wherein an entire portion of the semiconductor film isoverlapped with the gate wiring.
 10. The semiconductor device accordingto claim 9, wherein the semiconductor film is a microcrystallinesemiconductor film.
 11. The semiconductor device according to claim 9,wherein the gate insulating film comprises a first film and a secondfilm on the first film, the first film comprising silicon nitride orsilicon nitride oxide, and the second film comprising silicon oxide orsilicon oxynitride.
 12. The semiconductor device according to claim 9,wherein the insulating film comprises a silicon oxynitride.
 13. Thesemiconductor device according to claim 9, further comprising: a sourceregion and a drain region over the semiconductor film.
 14. Thesemiconductor device according to claim 9, further comprising: a firstsemiconductor film on the semiconductor film, wherein each of the sourceelectrode and the drain electrode is in contact with an upper surface ofthe first semiconductor film.
 15. The semiconductor device according toclaim 14, wherein the first semiconductor film has a larger band gapthan the semiconductor film.
 16. A semiconductor device comprising: asubstrate capable of transmitting light; a gate wiring over thesubstrate; a gate insulating film over the gate wiring; a semiconductorfilm, the semiconductor film including a channel formation region overthe gate wiring with the gate insulating film therebetween; a sourceelectrode and a drain electrode over the semiconductor film; aninsulating film over the semiconductor film, the source electrode, andthe drain electrode; and a pixel electrode over the insulating film, thepixel electrode being electrically connected to the source electrode orthe drain electrode; a spacer over the pixel electrode, the spaceroverlapping with the gate wiring; a counter electrode over the spacer;and a light blocking film, a first color filter film, and a second colorfilter film over the counter electrode, wherein the light blocking filmincludes a region overlapping with the spacer, wherein each of the firstcolor filter film and the second color filter film overlaps with theregion, wherein an entire portion of the semiconductor film isoverlapped with the gate wiring, and wherein the semiconductor filmcomprises amorphous portion and crystalline portion.
 17. Thesemiconductor device according to claim 16, wherein the semiconductorfilm is a microcrystalline semiconductor film.
 18. The semiconductordevice according to claim 16, wherein the gate insulating film comprisesa first film and a second film on the first film, the first filmcomprising silicon nitride or silicon nitride oxide, and the second filmcomprising silicon oxide or silicon oxynitride.
 19. The semiconductordevice according to claim 16, wherein the insulating film comprises asilicon oxynitride.
 20. The semiconductor device according to claim 16,further comprising: a source region and a drain region over thesemiconductor film.
 21. The semiconductor device according to claim 16,further comprising: a first semiconductor film on the semiconductorfilm, wherein each of the source electrode and the drain electrode is incontact with an upper surface of the first semiconductor film.
 22. Thesemiconductor device according to claim 21, wherein the firstsemiconductor film has a larger band gap than the semiconductor film.23. A semiconductor device comprising: a substrate capable oftransmitting light; a gate wiring over the substrate; a gate insulatingfilm over the gate wiring; a semiconductor film, the semiconductor filmincluding a channel formation region over the gate wiring with the gateinsulating film therebetween; a channel protective layer over thechannel formation region; a source electrode and a drain electrode overthe semiconductor film; an insulating film over the channel protectivelayer, the source electrode, and the drain electrode; and a pixelelectrode over the insulating film, the pixel electrode beingelectrically connected to the source electrode or the drain electrode; aspacer over the pixel electrode, the spacer overlapping with the gatewiring; a counter electrode over the spacer; and a light blocking film,a first color filter film, and a second color filter film over thecounter electrode, wherein the light blocking film includes a regionoverlapping with the spacer, wherein each of the first color filter filmand the second color filter film overlaps with the region, and whereinan entire portion of the semiconductor film is overlapped with the gatewiring.
 24. The semiconductor device according to claim 23, wherein thesemiconductor film is a microcrystalline semiconductor film.
 25. Thesemiconductor device according to claim 23, wherein the gate insulatingfilm comprises a first film and a second film on the first film, thefirst film comprising silicon nitride or silicon nitride oxide, and thesecond film comprising silicon oxide or silicon oxynitride.
 26. Thesemiconductor device according to claim 23, wherein the insulating filmcomprises a silicon oxynitride.
 27. The semiconductor device accordingto claim 23, further comprising: a source region and a drain region overthe semiconductor film.
 28. The semiconductor device according to claim23, further comprising: a first semiconductor film on the semiconductorfilm, wherein each of the source electrode and the drain electrode is incontact with an upper surface of the first semiconductor film.
 29. Thesemiconductor device according to claim 28, wherein the firstsemiconductor film has a larger band gap than the semiconductor film.30. A semiconductor device comprising: a substrate capable oftransmitting light; a gate wiring over the substrate; a gate insulatingfilm over the gate wiring; a semiconductor film, the semiconductor filmincluding a channel formation region over the gate wiring with the gateinsulating film therebetween; a channel protective layer over thechannel formation region; a source electrode and a drain electrode overthe semiconductor film; an insulating film over the channel protectivelayer, the source electrode, and the drain electrode; and a pixelelectrode over the insulating film, the pixel electrode beingelectrically connected to the source electrode or the drain electrode; aspacer over the pixel electrode, the spacer overlapping with the gatewiring; a counter electrode over the spacer; and a light blocking film,a first color filter film, and a second color filter film over thecounter electrode, wherein the light blocking film includes a regionoverlapping with the spacer, wherein each of the first color filter filmand the second color filter film overlaps with the region, wherein anentire portion of the semiconductor film is overlapped with the gatewiring, and wherein the semiconductor film comprises amorphous portionand crystalline portion.
 31. The semiconductor device according to claim30, wherein the semiconductor film is a microcrystalline semiconductorfilm.
 32. The semiconductor device according to claim 30, wherein thegate insulating film comprises a first film and a second film on thefirst film, the first film comprising silicon nitride or silicon nitrideoxide, and the second film comprising silicon oxide or siliconoxynitride.
 33. The semiconductor device according to claim 30, whereinthe insulating film comprises a silicon oxynitride.
 34. Thesemiconductor device according to claim 30, further comprising: a sourceregion and a drain region over the semiconductor film.
 35. Thesemiconductor device according to claim 30, further comprising: a firstsemiconductor film on the semiconductor film, wherein each of the sourceelectrode and the drain electrode is in contact with an upper surface ofthe first semiconductor film.
 36. The semiconductor device according toclaim 35, wherein the first semiconductor film has a larger band gapthan the semiconductor film.